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NPFC - MIL-S-19500/58

SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, GERMANIUM, HIGH-POWER TYPE 2N665

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Organization: NPFC
Publication Date: 7 October 1988
Status: active
Page Count: 1

Document History

Semiconductor Device, Transistor, PNP, Germanium, High-Power Type 2N665
A description is not available for this item.
July 13, 2011
Semiconductor Device, Transistor, PNP, Germanium, High-Power Type 2N665
A description is not available for this item.
March 26, 2004
SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, GERMANIUM, HIGH-POWER TYPE 2N665
A description is not available for this item.
June 7, 1999
SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, GERMANIUM, HIGH-POWER TYPE 2N665
A description is not available for this item.
MIL-S-19500/58
October 7, 1988
SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, GERMANIUM, HIGH-POWER TYPE 2N665
A description is not available for this item.
February 28, 1966
SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, GERMANIUM, HIGH-POWER TYPE 2N665
This specification covers the detailed requirements for a high-power, germanium, PNP, Transistor. See figure 1 (TO-3).
January 30, 1961
SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, GERMANIUM, HIGH-POWER TYPE 2N665
A description is not available for this item.
November 17, 1958
SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, GERMANIUM, HIGH-POWER TYPE 2N665
A description is not available for this item.

References

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