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DLA - SMD-5962-89892

MICROCIRCUIT, MEMORY, DIGITAL, CMOS 16K X 4 SRAM WITH OE, MONOLITHIC SILICON

inactive
Organization: DLA
Publication Date: 27 March 1990
Status: inactive
Page Count: 17
scope:

This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices".

The complete part number shall be as shown in the following example:

The device types shall identify the circuit function as follows:

Device type Generic number Circuit function Access time 01 See 6.6 16K × 4 Static RAM with [O bar][E bar] 25 ns (data retention) 02 " " 25 ns 03 " " 20 ns (data retention) 04 " " 20 ns 05 " " 15 ns (data retention) 06 " " 15 ns

The case outlines shall be as designated in appendix C of MIL-M-38510, and as follows:

Outline letter Case outline K F-6 (24-lead, .640" × .420" × .090"), flat package L D-9 (24-lead, 1.280" × .310" × .200"), dual-in-line package X C-11 (28-terminal, .560" × .358" × .120"), leadless chip carrier package Y C-11A (28-terminal, .560" × .358" × .075"), leadless chip carrier package

Supply voltage range (VCC) - - - - - - - - - - - −0.5 V dc to +7.0 V dc 1/ DC output current - - - - - - - - - - - - - - - - 20 mA Ambient storage temperature - - - - - - - - - - - −65°C to +150°C Temperature under bias - - - - - - - - - - - - - −55°C to +125°C Thermal resistance, junction-to-case (θJC): Cases K, L, X, and Y - - - - - - - - - - - - - See MIL-M-38510, appendix C Power dissipation (PD)- - - - - - - - - - - - - - 1.0 W Lead temperature (soldering, 10 seconds)- - - - - +260°C

Supply voltage range (VCC) - - - - - - - - - - - - +4.5 V dc to +5.5 V dc 1/ Ground voltage (VSS) (GND) - - - - - - - - - - - - 0 V dc Input high voltage (VIH) - - - - - - - - - - - - - −2.2 V dc to VCC +0.5 V dc Input low voltage (VIL) - - - - - - - - - - - - - - −0.5 V dc to 0.8 V dc 2/ Operating case temperature range (TC) - - - - - - - −55°C to +125°C

intended Use:

Microcircuits conforming to this drawing are intended for use when military specifications do not exist and qualified military devices that will perform the required function are not available for... View More

Document History

October 2, 2023
MICROCIRCUIT, MEMORY, DIGITAL, CMOS 16K X 4 SRAM WITH OE, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
May 23, 2016
MICROCIRCUIT, MEMORY, DIGITAL, CMOS 16K X 4 SRAM WITH OE, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes
July 5, 2007
MICROCIRCUIT, MEMORY, DIGITAL, CMOS 16K X 4 SRAM WITH OE, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
November 30, 2000
MICROCIRCUIT, MEMORY, DIGITAL, CMOS 16K X 4 SRAM WITH OE, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
SMD-5962-89892
March 27, 1990
MICROCIRCUIT, MEMORY, DIGITAL, CMOS 16K X 4 SRAM WITH OE, MONOLITHIC SILICON
This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices"....

References

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