NPFC - MIL-M-38510/1
MICROCIRCUITS, DIGITAL, TTL, NAND GATES, MONOLITHIC SILICON
| Organization: | NPFC |
| Publication Date: | 1 June 1982 |
| Status: | inactive |
| Page Count: | 31 |
scope:
This specification covers the detail requirements for monolithic silicon, TTL, positive NAND logic gating microcircuits. Three product assurance classes and a choice of case outline/lead finish are provided for each type and are reflected in the complete part number.
The part number shall be in accordance with MIL-M-38510, and as specified herein.
The device type shall be as follows:
Device type Circuit 01 Single, 8-input positive NAND gate 02 Dual, 4-input positive NAND gate 03 Triple, 3-input positive NAND gate 04 Quadruple, 2-input positive NAND gate 05 Hex, 1-input inverter gate 06 Triple, 3-input positive NAND gate (open collector output) 07 Quadruple, 2-input positive NAND gate (open collec- tor output) 08 Hex, 1-input inverter gate (open collector output) 09 Same as device type 07, except different pin connections
The device class shall be the product assurance level as defined in MIL-M-38510.
The case outline shall be designated as follows:
Letter Case outline (see MIL-M-38510, appendix C) A F-1 (14-lead, ¼" × ¼"), flat package B F-3 (14-lead, 3/16" × ¼"), flat package C D-1 (14-lead, ¼" × ¾"), dual-in-line package D F-2 (14-lead, ¼" × ⅜"), flat package
Supply voltage range - - - - - - - - - - - - −0.5 to +7.0 V Input voltage range- - - - - - - - - - - - - −1.5 at −12 mA to 5.5 V Storage temperature range- - - - - - - - - - −65° to +150°C Maximum power dissipation per gate (PD) 1/ - 40 mW Lead temperature (soldering, 10 seconds) - - 300°C Thermal resistance, junction-to-case (θJC): Case A, B, and D - - - - - - - - - - - - - 0.09°C/mW Case C - - - - - - - - - - - - - - - - - - 0.08°C/mW Junction temperature (TJ)- - - - - - - - - - 175°C
Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document should be addressed to: Rome Air Development Center (RBE-2), Griffiss AFB, NY 13441 by using the self-addressed Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this document or by letter.
Supply voltage- - - - - - - - - - - - - - - 4.5 minimum to 5.5 V maximum Minimum high level input voltage- - - - - - 2.0 V Maximum low level input voltage - - - - - - 0.8 V Normalized fanout.(each output) 2/- - - - - l0 maximum Case operating temperature range- - - - - - −55° to +125°c
intended Use:
Microcircuits conforming to this specification are intended for original equipment design applications and logistic support of existing... View More
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