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NPFC - MIL-M-38510/352

MICROCIRCUITS, DIGITAL, BIPOLAR ADVANCED SCHOTTKY TTL, NAND BUFFERS, MONOLITHIC SILICON

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Organization: NPFC
Publication Date: 7 August 1987
Status: inactive
Page Count: 19
scope:

This specification covers the detail requirements for monolithic silicon, advanced Schottky TTL NAND buffers. Two product assurance classes and a choice of case outlines and lead finishes are provided and are reflected in the complete number part.

The part number shall be in accordance with MIL-M-38510, and as specified herein.

The device types shall be as follows:

Device type Circuit 01 Quad 2-input NAND buffer 02 Quad 2-input NAND buffer (open collector) 03 Dual 4-input NAND buffer

The device class shall be the product assurance level as defined in MIL-M-38510.

The case outlines shall be designated as follows:

Outline letter Case outline (see MIL-M-38510, appendix C) C D-1 (14-lead, ¼" × ¾"), dual-in-line package D F-2 (14-lead, ¼" × ⅜"), flat package 2 C-2 (20-terminal, .350" × .350"), square chip carrier package

Supply voltage range - - - - - - - - - - - - - −0.5 V dc to +7.0 V dc Input voltage range - - - - - - - - - - - - - −1.2 V dc at −18mA to +7.0 V dc Storage temperature range - - - - - - - - - - −65°C to +150°C Maximum power dissipation (PD) 1/: Device type 01 - - - - - - - - - - - - - - - 182 mW Device type 02 - - - - - - - - - - - - - - - 165 mW Device type 03 - - - - - - - - - - - - - - - 94 mW Lead temperature (soldering, 10 seconds) - - - +300°C Thermal resistance, junction-to-case (θJC): Cases C and D - - - - - - - - - - - - - - - (See MIL-M-38510, appendix C) Case 2 - - - - - - - - - - - - - - - - - - - 60°C/W 2/ Junction temperature (TJ) 3/ - - - - - - - - - +175°C

Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document should be addressed to: Rome Air Development Center (RBE-2), Griffiss AFB, NY 13441, by using the self-addressed Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this document or by letter.

Supply voltage - - - - - - - - - - - - - 4.5 V dc minimum to 5.5 V dc maximum Minimum high-level input voltage (VIH) - 2.0 V dc Maximum low-level input voltage (VIL) - 0.8 V dc Normalized fanout (each output) 4/: Low level 01, 03 - - - - - - - - - - - 80 maximum Low level 02 - - - - - - - - - - - - - 16 maximum High level 01, 03 - - - - - - - - - - 50 maximum High level 02 - - - - - - - - - - - - 12 maximum Case operating temperature range (TC) - −55°C to +125°C

intended Use:

Microcircuits conforming to this specification are intended for original equipment design applications and logistic support of existing equipment.

Document History

Microcircuits, Digital, Bipolar Advanced Schottky TTL, Nand Buffers, Monolithic Silicon
A description is not available for this item.
October 26, 2018
Microcircuits, Digital, Bipolar Advanced Schottky TTL, Nand Buffers, Monolithic Silicon
A description is not available for this item.
January 16, 2014
Microcircuits, Digital, Bipolar Advanced Schottky TTL, Nand Buffers, Monolithic Silicon
A description is not available for this item.
April 2, 2009
Microcircuits, Digital, Bipolar Advanced Schottky TTL, Nand Buffers, Monolithic Silicon
This specification covers the detail requirements for monolithic silicon, Advanced Schottky TTL, NAND buffers. Two product assurance classes and a choice of case outlines and lead finishes are...
June 16, 2004
MICROCIRCUITS, DIGITAL, BIPOLAR ADVANCED SCHOTTKY TTL, NAND BUFFERS, MONOLITHIC SILICON
This specification covers the detail requirements for monolithic silicon, Advanced Schottky TTL, NAND buffers. Two product assurance classes and a choice of case outlines and lead finishes are...
July 12, 2002
MICROCIRCUITS, DIGITAL, BIPOLAR ADVANCED SCHOTTKY TTL, NAND BUFFERS, MONOLITHIC SILICON
A description is not available for this item.
July 8, 1997
MICROCIRCUITS, DIGITAL, BIPOLAR ADVANCED SCHOTTKY TTL, NAND BUFFERS, MONOLITHIC SILICON
A description is not available for this item.
MIL-M-38510/352
August 7, 1987
MICROCIRCUITS, DIGITAL, BIPOLAR ADVANCED SCHOTTKY TTL, NAND BUFFERS, MONOLITHIC SILICON
This specification covers the detail requirements for monolithic silicon, advanced Schottky TTL NAND buffers. Two product assurance classes and a choice of case outlines and lead finishes are...

References

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