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DLA - SMD-5962-96900

MICROCIRCUIT, HYBRID, MEMORY, DUAL, DIGITAL, SINGLE 128K X 16 BIT STATIC RANDOM ACCESS MEMORY, WITH SEPARATE DATA BUS AND SINGLE, 128K X 16-BIT FLASH ERASABLE/PROGRAMMABLE READ ONLY MEMORY WITH SEPARATE DATA BUS

inactive
Organization: DLA
Publication Date: 27 January 1997
Status: inactive
Page Count: 25
scope:

This drawing documents five product assurance classes, class D (lowest reliability), class E, (exceptions), class G (lowest high reliability), class H (high reliability), and class K, (highest reliability) and a choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of radiation hardness assurance levels are reflected in the PIN.

The PIN shall be as shown in the following example:

Device classes H and K RHA marked devices shall meet the MIL-PRF-38534 specified RHA levels and shall be marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device.

The device type(s) shall identify the circuit function as follows:

Device type Generic number Circuit function Access time 01 WSF128K16-72Q Single 128K × 16-bit SRAM and 70 ns (SRAM) single 128K × 16-bit Flash EPROM 120 ns (EPROM) each with separate data buses 02 WSF128K16-37Q Single 128K × 16-bit SRAM and 35 ns (SRAM) 128K × 16-bit Flash EPROM 70 ns (EPROM) each with separate data buses

This device class designator shall be a single letter identifying the product assurance level as follows:

Device class Device performance documentation D, E, G, H, or K Certification and qualification to MIL-PRF-38534

The case outline(s) shall be as designated in MIL-STD-1835 and as follows:

Outline letter Descriptive designator Terminals Package style M See figure 1 68 Ceramic, Quad flatpack, dual cavity X See figure 1 66 Hex-in-line, single cavity, with standoffs

The lead finish shall be as specified in MIL-PRF-38534.

Supply voltage range (VCC) ........................... −0.5 V dc to +7.0 V dc Input voltage range .................................. −0.5 V dc to +7.0 V dc Power dissipation (PD) ............................... 1.4 W maximum Storage temperature range ............................ −65°C to +150°C Lead temperature (soldering, 10 seconds) ............. +300°C Thermal resistance junction-to-case (θJC): Case outline M ..................................... 12.8°C/W maximum Case outline X ..................................... 8.7°C/W maximum Data retention (Flash) ............................... 10 years minimum Endurance (Flash) .................................... 10,000 cycles minimum

Supply voltage range (VCC) ........................... +4.5 V dc to +5.5 V dc Input low voltage range (VIL ) ....................... −0.5 V dc to +0.8 V dc Input high voltage range (VIH) ....................... +2.2 V dc to VCC +0.3 V dc Output voltage, high minimum (VOH) ................... +2.4 V dc Output voltage, low maximum VOL) ..................... +0.4 V dc Case operating temperature range (TC) ................ −55°C to +125°C

intended Use:

Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.

Document History

November 10, 2003
MICROCIRCUIT, HYBRID, MEMORY, DUAL, DIGITAL, SINGLE 128K X 16 BIT STATIC RANDOM ACCESS MEMORY, WITH SEPARATE DATA BUS AND SINGLE, 128K X 16-BIT FLASH ERASABLE/PROGRAMMABLE READ ONLY MEMORY WITH SEPARATE DATA BUS
A description is not available for this item.
March 14, 2003
MICROCIRCUIT, HYBRID, MEMORY, DUAL, DIGITAL, SINGLE 128K X 16 BIT STATIC RANDOM ACCESS MEMORY, WITH SEPARATE DATA BUS AND SINGLE, 128K X 16-BIT FLASH ERASABLE/PROGRAMMABLE READ ONLY MEMORY WITH SEPARATE DATA BUS
A description is not available for this item.
September 20, 2000
MICROCIRCUIT, HYBRID, MEMORY, DUAL, DIGITAL, SINGLE 128K X 16 BIT STATIC RANDOM ACCESS MEMORY, WITH SEPARATE DATA BUS AND SINGLE, 128K X 16-BIT FLASH ERASABLE/PROGRAMMABLE READ ONLY MEMORY WITH SEPARATE DATA BUS
A description is not available for this item.
August 23, 1999
MICROCIRCUIT, HYBRID, MEMORY, DUAL, DIGITAL, SINGLE 128K X 16 BIT STATIC RANDOM ACCESS MEMORY, WITH SEPARATE DATA BUS AND SINGLE, 128K X 16-BIT FLASH ERASABLE/PROGRAMMABLE READ ONLY MEMORY WITH SEPARATE DATA BUS
This drawing documents five product assurance classes, class D (lowest reliability), class E, (exceptions), class G (lowered high reliability), class H (high reliability), and class K, (highest...
June 26, 1998
MICROCIRCUIT, HYBRID, MEMORY, DUAL, DIGITAL, SINGLE 128K X 16 BIT STATIC RANDOM ACCESS MEMORY, WITH SEPARATE DATA BUS AND SINGLE, 128K X 16-BIT FLASH ERASABLE/PROGRAMMABLE READ ONLY MEMORY WITH SEPARATE DATA BUS
This drawing documents five product assurance classes, class D (lowest reliability), class E, (exceptions), class G (lowest high reliability), class H (high reliability), and class K, (highest...
September 16, 1997
MICROCIRCUIT, HYBRID, MEMORY, DUAL, DIGITAL, SINGLE 128K X 16 BIT STATIC RANDOM ACCESS MEMORY, WITH SEPARATE DATA BUS AND SINGLE, 128K X 16-BIT FLASH ERASABLE/PROGRAMMABLE READ ONLY MEMORY WITH SEPARATE DATA BUS
This drawing documents five product assurance classes, class D (lowest reliability), class E, (exceptions), class G (lowest high reliability), class H (high reliability), and class K, (highest...
SMD-5962-96900
January 27, 1997
MICROCIRCUIT, HYBRID, MEMORY, DUAL, DIGITAL, SINGLE 128K X 16 BIT STATIC RANDOM ACCESS MEMORY, WITH SEPARATE DATA BUS AND SINGLE, 128K X 16-BIT FLASH ERASABLE/PROGRAMMABLE READ ONLY MEMORY WITH SEPARATE DATA BUS
This drawing documents five product assurance classes, class D (lowest reliability), class E, (exceptions), class G (lowest high reliability), class H (high reliability), and class K, (highest...

References

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