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DLA - SMD-5962-84013 REV E

MICROCIRCUIT, DIGITAL, BIPOLAR, ADVANCED LOW POWER SCHOTTKY, TTL, TRANSCEIVER, MONOLITHIC SILICON

inactive
Organization: DLA
Publication Date: 5 October 1992
Status: inactive
Page Count: 16
scope:

This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices".

The complete part number shall be as shown in the following example:

The device types shall identify the circuit function as follows:

Device type Generic number Circuit 01 54ALS242B Quadruple bus transceiver with three state outputs 02 54ALS243A Quadruple bus transceiver with three state outputs

The case outlines shall be as designated in appendix C of MIL-M-38510, and as follows:

Outline letter Case outline C D-1 (14-lead, .785" × .310" × .200"), dual-in-line package D F-2 (14-lead, .390" × .260 × .085"), flat package 2 C-2 (20-terminal, .358" × .358" × .100"), square chip carrier package

Supply voltage range - - - - - - - - - - - - −0.5 V dc minimum to +7.0 V dc maximum Input voltage range (All inputs)- - - - - - - - −1.2 V dc at −18 mA to +7.0 V dc Input voltage range (I/O ports) - - - - - - - - −1.2 V dc at −18 mA to +5.5 V dc Storage temperature range - - - - - - - - - - - −65°C to +150°C Maximum power dissipation (PD)1/ Device 01 - - - - - - - - - - - - - - - - - - 148.5 mW Device 02 - - - - - - - - - - - - - - - - - - 203.5 mW Lead temperature (soldering, 10 seconds)- - - - +300°C Thermal resistance, junction to case (AJC)- - - See MIL-M-38510, appendix C Junction temperature (TJ) - - - - - - - - - - - +175°C

Supply voltage (VCC) - - - - - - - - - - - - - - - 4.5 V dc minimum to 5.5 V dc maximum Minimum high level input voltage (VIH) - - - - - - 2.0 V dc Maximum low level input voltage (VIL): VIL = + 125°C - - - - - - - - - - - - - - - - - 0.7 V dc VIL = + 25°C - - - - - - - - - - - - - - - - - - 0.8 V dc VIL = − 55°C - - - - - - - - - - - - - - - - - - 0.8 V dc Normalized fanout (each input) 2/- - - - - - - - - 20 maximum Case operating temperature range (TC) - - - - - - −55°C to +125°C

intended Use:

Microcircuits conforming to this drawing are intended for use when military specifications do not exist and qualified military devices that will perform the required function are not available for... View More

Document History

September 23, 2022
MICROCIRCUIT, DIGITAL, BIPOLAR, ADVANCED LOW-POWER SCHOTTKY, TTL, TRANSCEIVER, MONOLITHIC SILICON
Scope. This drawing describes device requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A.
December 6, 2017
MICROCIRCUIT, DIGITAL, BIPOLAR, ADVANCED LOW POWER SCHOTTKY, TTL, TRANSCEIVER, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
October 26, 2005
MICROCIRCUIT, DIGITAL, BIPOLAR, ADVANCED LOW POWER SCHOTTKY, TTL, TRANSCEIVER, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
SMD-5962-84013 REV E
October 5, 1992
MICROCIRCUIT, DIGITAL, BIPOLAR, ADVANCED LOW POWER SCHOTTKY, TTL, TRANSCEIVER, MONOLITHIC SILICON
This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices"....
February 20, 1992
MICROCIRCUIT, DIGITAL, BIPOLAR, ADVANCED LOW POWER SCHOTTKY, TTL, TRANSCEIVER, MONOLITHIC SILICON
A description is not available for this item.
May 16, 1988
MICROCIRCUIT, DIGITAL, BIPOLAR, ADVANCED LOW POWER SCHOTTKY, TTL, TRANSCEIVER, MONOLITHIC SILICON
A description is not available for this item.
March 24, 1987
MICROCIRCUIT, DIGITAL, BIPOLAR, ADVANCED LOW POWER SCHOTTKY, TTL, TRANSCEIVER, MONOLITHIC SILICON
A description is not available for this item.
October 10, 1986
MICROCIRCUIT, DIGITAL, BIPOLAR, ADVANCED LOW POWER SCHOTTKY, TTL, TRANSCEIVER, MONOLITHIC SILICON
A description is not available for this item.
April 26, 1984
MICROCIRCUIT, DIGITAL, BIPOLAR, ADVANCED LOW POWER SCHOTTKY, TTL, TRANSCEIVER, MONOLITHIC SILICON
A description is not available for this item.

References

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