DLA - SMD-5962-81024 REV E
MICROCIRCUIT, DIGITAL, CMOS, 4096 BIT, STATIC RANDOM ACCESS MEMORY (SRAM), MONOLITHIC SILICON
| Organization: | DLA |
| Publication Date: | 12 October 1993 |
| Status: | inactive |
| Page Count: | 29 |
scope:
This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in Conjunction with compliant non-JAN devices".
The complete PIN shall be as shown in the following example:
The device types shall identify the circuit function as follows:
Device type Generic number 1/ Access time Circuit 01 120 ns 4096-word × 1-bit static random access memory 02 120 ns 1024-word × 4-bit static random access memory 03 200 ns 4096-word × 1-bit static random access memory 04 200 ns 1024-word × 4-bit static random access memory 05 300 ns 4096-word × 1-bit static random access memory 06 300 ns 1024-word × 4-bit static random access memory 07 55 ns 4096-word × 1-bit static random access memory 08 80 ns 4096-word × 1-bit static random access memory 09 80 ns 4096-word × 1-bit static random access memory
The case outline(s) shall be as designated in MIL-STD-1835 and as follows:
Outline letter Descriptive designator Terminals Package style V GDIP1-T18 or CDIP2-T18 18 Dual-in-line package X CQCC1-N18 18 Rectangular chip carrier package Y See figure 1 18 Flat package
The lead finish shall be as specified in MIL-M-38510. Finish letter "X" shall not be marked on the microcircuit or its packaging. The "X" designation is for use in specifications when lead finishes A, B, and C are considered acceptable and interchangeable without preference.
Supply voltage range (VDD) (device type 07, 08, and 09) . . . . . . . VSS −0.5 V to +7.0 V Supply voltage range (VDD) (device type 01-06) . . . . . . . . . . . VSS −0.3 V to +8.0 V Temperature under bias . . . . . . . . . . . . . . . . . . . . . . . −55°C to +125°C Storage temperature range . . . . . . . . . . . . . . . . . . . . . . −65°C to +150°C Maximum power dissipation (PD) 2/ . . . . . . . . . . . . . . . . . . 200 mW Lead temperature (soldering, 10 seconds) . . . . . . . . . . . . . . +260°C Thermal resistance, junction-to-case (OJC): Cases V and X . . . . . . . . . . . . . . . . . . . . . . . . . . . See MIL-STD-1835 Case Y . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40°C/W 3/ Junction temperature (TJ) . . . . . . . . . . . . . . . . . . . . . . +150°C All input or output voltages with respect to ground . . . . . . . . . . . . . . . . . . . . . . . . . VSS −0.3 V to VCC +0.3 V
Supply voltage range (VDD - VSS). . . . . . . . . . . . . . . 4.5 V dc to 5.5 V dc Input low (VIL) voltage range . . . . . . . . . . . . . . . . VSS −0.3 V dc to VSS +0.8 V dc Input high (VIH) voltage range . . . . . . . . . . . . . . . VDD −2.0 V dc to VDD +0.3 V dc Input high (VIH) voltage range . . . . . . . . . . . . . . . 2.0 V dc to 6.0 V dc Case operating temperature range (TC) . . . . . . . . . . . . −55°C to +125°C Chip enable output enable time (TELQX) . . . . . . . . . . . 5 ns minimum Chip enable output disable time (TEHQZ): Device types 01 and 02 . . . . . . . . . . . . . . . . . . 70 ns maximum Device types 03 and 04 . . . . . . . . . . . . . . . . . . 80 ns maximum Device types 05 and 06 . . . . . . . . . . . . . . . . . . 100 ns maximum Device type 07, 08, 09 . . . . . . . . . . . . . . . . . . 30 ns maximum
intended Use:
Microcircuits conforming to this drawing are intended for use when military specifications do not exist and qualified military devices that will perform the required function are not available for... View More
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