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DLA - SMD-5962-88740 REV B

MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 2K X 8 STATIC RAM, MONOLITHIC SILICON

inactive
Organization: DLA
Publication Date: 23 March 1992
Status: inactive
Page Count: 16
scope:

This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with complaint non-JAN devices".

The complete part number shall be as shown in the following example:

The device types shall identify the circuit function as follows:

Device type Generic number Circuit function Access time 01 (See 6.6) 2K 8 low power CMDS SRAM 35 ns 02 (See 6.6) 2K 8 low power CMDS SRAM 25 ns

The case outlines shall be as designated in appendix C of MIL-M-38510, and as follows:

Outline letter Case outline J D-3 (24-lead, 1.290" × .610" × .225"), dual-in-line package K F-6 (24-lead, .640" × .420" × .090"), flat package L D-9 (24-Lead, 1.280" × .310" × .200"), dual-in-line package X C-12 (32-terminal, .560" × .458" × .120"), rectangular chip carrier package Y Figure 1 (24-lead, .308" × .408" × .120"), rectangular chip carrier package 3 C-4 (28-terminal, .460" × .460" × .100"), square chip carrier package

Supply voltage range (VCC) - - - - - - - - - - - - - −0.5 V dc to 7 V dc Input voltage range 2/- - - - - - - - - - - - - - - 0.5 V dc to VCC +0.5 V dc Output voltage range in high impedance state - - - - −0.5 V dc to 7 V dc Output current - - - - - - - - - - - - - - - - - - - 20 mA Storage temperature range - - - - - - - - - - - - - −65°C to +150°C Power dissipation (PD) - - - - - - - - - - - - - - - 1 W Lead temperature (soldering, 10 seconds) - - - - - - +275°C Junction temperature (TJ)- - - - - - - - - - - - - - +175°C Thermal resistance, junction-to-case (θJC) - - - - - See MIL-M-38510, appendix C

Supply voltage range (VCC) - - - - - - - - - - - - - 4.5 V dc to minimum to 5.5 V dc maximum High level input voltage (VIH) - - - - - - - - - - - 2.2 V dc minimum to VCC + 0.5 V dc maximum Low level input voltage (VIL) 2/ - - - - - - - - - −0.5 V dc minimum to 0.8 V dc maximum Case operating temperature range (TC) - - - - - - - −55°C to +125°C

intended Use:

Microcircuits conforming to this drawing are intended for use when military specifications do not exist and qualified military devices that will perform the required function are not available for... View More

Document History

March 22, 2022
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 2K X 8 STATIC RAM, MONOLITHIC SILICON
Scope. This drawing describes device requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A.
August 12, 2015
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 2K X 8 STATIC RAM, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
February 13, 2007
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 2K X 8 STATIC RAM, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
January 12, 2001
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 2K X 8 STATIC RAM, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
SMD-5962-88740 REV B
March 23, 1992
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 2K X 8 STATIC RAM, MONOLITHIC SILICON
This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with complaint non-JAN devices"....
June 1, 1990
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 2K X 8 STATIC RAM, MONOLITHIC SILICON
A description is not available for this item.
February 8, 1989
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 2K X 8 STATIC RAM, MONOLITHIC SILICON
A description is not available for this item.

References

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