DLA - SMD-5962-84039 REV E
MICROCIRCUIT, DIGITAL, HIGH-SPEED CMOS, DUAL 4-INPUT NAND GATE, MONOLITHIC SILICON
inactive
| Organization: | DLA |
| Publication Date: | 24 August 2001 |
| Status: | inactive |
| Page Count: | 11 |
Document History
December 18, 2020
MICROCIRCUIT, DIGITAL, HIGH-SPEED CMOS, DUAL 4-INPUT NAND GATE, MONOLITHIC SILICON
Scope.
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead...
January 28, 2014
MICROCIRCUIT, DIGITAL, HIGH-SPEED CMOS, DUAL 4-INPUT NAND GATE, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes...
October 26, 2006
MICROCIRCUIT, DIGITAL, HIGH-SPEED CMOS, DUAL 4-INPUT NAND GATE, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes...
March 17, 2005
MICROCIRCUIT, DIGITAL, HIGH-SPEED CMOS, DUAL 4-INPUT NAND GATE, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
SMD-5962-84039 REV E
August 24, 2001
MICROCIRCUIT, DIGITAL, HIGH-SPEED CMOS, DUAL 4-INPUT NAND GATE, MONOLITHIC SILICON
A description is not available for this item.
January 1, 1988
MICROCIRCUIT, DIGITAL, HIGH-SPEED CMOS, DUAL 4-INPUT NAND GATE, MONOLITHIC SILICON
A description is not available for this item.