scope:

This specification covers the detail requirements for 500 milliwatt, silicon, voltage regulator diodes having voltage tolerances of 5 percent, 2 percent, and 1 percent. Three levels of product assurance are provided for each device type as specified in MIL-S-19500. One level of product assurance is provided for die.

See 3.3.

Maximum ratings are as shown in table IV herein and as follows:

P_T = 500 mW (D0-35) at T_L = +50°C, L = .375 (9.53 mm); both ends of case or diode body to heat sink at L = .375 (9.53 mm). (Derate I_Z to 0.0 mA dc at +175°C).

P_T = 500 mW (D0-213AA) at T_EC = +125°C (derate to 0 at +175°C).

−65°C ≥ T_op ≥ +175°C; −65°C ≥ T_STG ≥ +175°C.

Primary electrical characteristic are shown in columns 2, 9, 12, and 14 of table IV herein and as follows:

11 V dc ≥ V_z ≥ 200 V dc 1N962B-1 through 1N992B-1 are 5 percent voltage tolerance. 1N962C-1 through 1N992C-1 are 2 percent voltage tolerance. 1N962D-1 through 1N992D-1 are 1 percent voltage tolerance. R_ΘJL = 250°C/W (maximum) at L = .375 inch (9.53 mm) (D0-35). R_ΘJEC = 100°C/W (maximum) junction to endcaps (D0-213AA).

Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document should be addressed to: Commander, Defense Electronics Supply Center, ATTN: DESC-ELDT, 1507 Wilmington Pike, Dayton, OH 45444-5765, by using the Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this document or by letter.