NPFC - MIL-S-19500/117
SEMICONDUCTOR DEVICE, DIODE, SILICON TYPES 1N962B-1 THROUGH 1N9926-1, AND 1N962BUR-I THROUGH IN992BUR-1, JAN, JANTX, JANTXV, AND JANC
| Organization: | NPFC |
| Publication Date: | 8 September 1992 |
| Status: | inactive |
| Page Count: | 21 |
scope:
This specification covers the detail requirements for 475 milliwatt, silicon, voltage regulator diodes. Four levels of product assurance are provided for each device type as specified in MIL-S-19500.
See figures 1, 2, and 3, (DO-35), (DO-213AA) and JANC.
Maximum ratings are as shown in table VI herein and as follows:
PT = 500 mW (D0-35) at TL = 75°C, L = .375 (9.53 mm); both ends of case or diode body to heat sink at L = .375 (9.53 mm). (Derate IZ to 0.0 mA dc at +200°C).
PT = 500 mW (D0-213AA) at TEC = 150°C. (Derate to 0 at 200°C).
−65°C ≤ Top ≤ +200°C; −65°C ≤ TSTG ≤ +200°C.
Primary electrical characteristic columns 2, 9, 12, and 14 of table VI herein and as follows:
11 V dc ≤ Vz ≤ 200 V dc
RΘJL = 250°C/W (maximum) at L = .375 inch (9.53 mm) (D0-35).
RΘJEC = 100°C/W (maximum) junction to endcaps (D0-213AA). Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document should be addressed to: Commander, Defense Electronics Supply Center, ATTN: DESC-ECT, 1507 Wilmington Pike, Dayton, OH 45444-5276, by using the Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this document or by letter.
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