DLA - SMD-5962-93249 REV A
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 512 X 9 PARALLEL SYNCHRONOUS FIFO, MONOLITHIC SILICON
inactive
| Organization: | DLA |
| Publication Date: | 5 June 2001 |
| Status: | inactive |
| Page Count: | 26 |
Document History
June 28, 2021
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 512 X 9 PARALLEL SYNCHRONOUS FIFO, MONOLITHIC SILICON
Scope.
This drawing documents two product assurance class levels consisting of high reliability (device class Q and M) and space application (device class V). A choice of case outlines and lead...
April 3, 2015
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 512 X 9 PARALLEL SYNCHRONOUS FIFO, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device class Q and M) and space application (device class V). A choice of case outlines and lead finishes are...
May 9, 2006
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 512 X 9 PARALLEL SYNCHRONOUS FIFO, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes...
SMD-5962-93249 REV A
June 5, 2001
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 512 X 9 PARALLEL SYNCHRONOUS FIFO, MONOLITHIC SILICON
A description is not available for this item.
December 16, 1994
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 512 X 9 PARALLEL SYNCHRONOUS FIFO, MONOLITHIC SILICON
This drawing forms a part of a one part - one part number documentation system (see 6.6 herein). Two product assurance classes consisting of military high reliability (device classes Q and M) and...