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DLA - SMD-5962-98534

MICROCIRCUIT, DIGITAL, RADIATION HARDENED, ADVANCED CMOS, 3-TO-8 LINE DECODER/DEMULTIPLEXER, MONOLITHIC SILICON

inactive
Organization: DLA
Publication Date: 19 December 1997
Status: inactive
Page Count: 17
scope:

This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN.

The PIN is as shown in the following example:

Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device.

The device type(s) identify the circuit function as follows:

Device type Generic number Circuit function 01 ACS138 Radiation hardened, SOS, advanced CMOS, 3-to-8 line decoder/demultiplexer

The device class designator is a single letter identifying the product assurance level as follows:

Device class Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38545, appendix A Q or V Certification and qualification to MIL-PRF-38535

The case outline(s) are as designated in MIL-STD-1835 and as follows:

Outline letter Descriptive designator Terminals Package style E CDIP2-T16 16 Dual-in-line X CDFP4-F16 16 Flat pack

The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M.

Supply voltage range (VCC) ................................................ −0.5 V dc to +7.0 V dc DC input voltage range (VIN) .............................................. −0.5 V dc to VCC + 0.5 V dc DC output voltage range (VOUT) ............................................ −0.5 V dc to VCC + 0.5 V dc DC input current, any one input (IIN) ..................................... ±10 mA DC output current, any one output (IOUT) .................................. ±50 mA Storage temperature range (TSTG) .......................................... −65°C to +150°C Lead temperature (soldering, 10 seconds) .................................. +265°C Thermal resistance, junction-to-case (θJC): Case outline E ........................................................... 24°C/W Case outline X ........................................................... 29°C/W Thermal resistance, junction-to-ambient (θJA): Case outline E ........................................................... 74°C/W Case outline X ........................................................... 116°C/W Junction temperature (TJ) ................................................. +175°C Maximum package power dissipation at TA = +125°C (PD): 4/ Case outline E ........................................................... 0.68 W Case outline X ........................................................... 0.43 W

Supply voltage range (VCC) ................................................ +4.5V dc to +5.5 V dc Input voltage range (VIN) ................................................. +0.0 V dc to VCC Output voltage range (VOUT) ............................................... +0.0 V dc to VCC Maximum low level input voltage (VIL) ..................................... 30% of VCC Minimum high level input voltage (VIH) .................................... 70% of VCC Case operating temperature range (TC) ..................................... −55°C to +125°C Maximum input rise and fall time at VCC = 4.5 V (tr, tf) .................. 10 ns/V Radiation features: Total dose ............................................................... > 3 × 105 Rads (Si) Single event phenomenon (SEP) effective linear energy threshold (LET) no upsets (see 4.4.4.4) .................. > 100 MeV/(cm2/mg) 5/ Dose rate upset (20 ns pulse) ........................................... Not tested Latch-up ................................................................ None 5/ Dose rate survivability ................................................. Not tested

intended Use:

Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.

Microcircuits... View More

Document History

March 22, 2022
MICROCIRCUIT, DIGITAL, RADIATION HARDENED, ADVANCED CMOS, 3-TO-8 LINE DECODER/DEMULTIPLEXER, MONOLITHIC SILICON
Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q) and space application (device class V). A choice of case outlines and lead finishes...
October 3, 2005
MICROCIRCUIT, DIGITAL, RADIATION HARDENED, ADVANCED CMOS, 3-TO-8 LINE DECODER/DEMULTIPLEXER, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes...
March 10, 1999
MICROCIRCUIT, DIGITAL, RADIATION HARDENED, ADVANCED CMOS, 3-TO-8 LINE DECODER/DEMULTIPLEXER, MONOLITHIC SILICON
A description is not available for this item.
SMD-5962-98534
December 19, 1997
MICROCIRCUIT, DIGITAL, RADIATION HARDENED, ADVANCED CMOS, 3-TO-8 LINE DECODER/DEMULTIPLEXER, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes...

References

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