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DLA - SMD-5962-97527

MICROCIRCUIT, DIGITAL, ADVANCED BIPOLAR CMOS, 10-BIT BUS-EXCHANGE SWITCH WITH THREE STATE OUTPUTS AND LEVEL SHIFTING, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON

inactive
Organization: DLA
Publication Date: 3 June 1997
Status: inactive
Page Count: 17
scope:

This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN.

The PIN is as shown in the following example:

Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device.

The device type(s) identify the circuit function as follows:

Device type Generic number Circuit function 01 54CBTD3384 10-bit bus-exchange switch with three- state outputs and level shifting, TTL compatible inputs

The device class designator is a single letter identifying the product assurance level as follows:

Device class Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certification and qualification to MIL-PRF-38535

The case outline(s) are as designated in MIL-STD-1835 and as follows:

Outline letter Descriptive designator Terminals Package style K GDFP2-F24 or CDFP3-F24 24 Flat package L GDIP3-T24 or CDIP4-T24 24 Dual-in-line 3 CQCC1-N28 28 Square leadless chip carrier

The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M.

Supply voltage range (VCC)....................................................... −0.5 V dc to +7.0 V dc DC input voltage range (VIN)..................................................... −0.5 V dc to +7.0 V dc 4/ Continuous channel current....................................................... 128 mA DC input clamp current (IIK) (VI/O < 0.0) ........................................−50 mA Maximum power dissipation at (TA = +55°C in still air) (PD) ..................... 772 mW 5/ Storage temperature range (TSTG) ................................................ −65°C to +150°C Lead temperature (soldering, 10 seconds) ........................................ +300°C Thermal resistance, junction-to-case (ΘJC) ...................................... See MIL-STD-1835 Junction temperature (TJ) ....................................................... +150°C

Supply voltage range (VCC) ...................................................... +4.5 V dc to +5.5 V dc Minimum high level control input voltage (VIH) .................................. +2.0 V dc Maximum low level control input voltage (VIL) ................................... +0.8 V dc Case operating temperature range (TC) ........................................... −55°C to +125°C

Fault coverage measurement of manufacturing logic tests (MIL-STD-883, test method 5012).................................... XX percent 6/

intended Use:

Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.

Microcircuits... View More

Document History

March 23, 2022
MICROCIRCUIT, DIGITAL, ADVANCED BIPOLAR CMOS, 10-BIT BUS-EXCHANGE SWITCH WITH THREE-STATE OUTPUTS AND LEVEL SHIFTING, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q) and space application (device class V). A choice of case outlines and lead finishes...
November 25, 2015
MICROCIRCUIT, DIGITAL, ADVANCED BIPOLAR CMOS, 10-BIT BUS-EXCHANGE SWITCH WITH THREE-STATE OUTPUTS AND LEVEL SHIFTING, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes...
August 18, 2010
MICROCIRCUIT, DIGITAL, ADVANCED BIPOLAR CMOS, 10-BIT BUS-EXCHANGE SWITCH WITH THREE-STATE OUTPUTS AND LEVEL SHIFTING, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes...
January 8, 2003
MICROCIRCUIT, DIGITAL, ADVANCED BIPOLAR CMOS, 10-BIT BUS-EXCHANGE SWITCH WITH THREE STATE OUTPUTS AND LEVEL SHIFTING, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
A description is not available for this item.
SMD-5962-97527
June 3, 1997
MICROCIRCUIT, DIGITAL, ADVANCED BIPOLAR CMOS, 10-BIT BUS-EXCHANGE SWITCH WITH THREE STATE OUTPUTS AND LEVEL SHIFTING, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M and space application (device class V). A choice of case outlines and lead finishes...

References

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