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DLA - SMD-5962-91513

MICROCIRCUIT, DIGITAL, HIGH-SPEED CMOS, AND-OR-INVERT GATES, MONOLITHIC SILICON

inactive
Organization: DLA
Publication Date: 5 March 1993
Status: inactive
Page Count: 17
scope:

This drawing forms a part of a one part - one part number documentation system (see 6.6 herein). Two product assurance classes consisting of military high reliability (device classes B, Q, and M) and space application (device classes S and V), and a choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). Device class M Microcircuits represent non-JAN class B Microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN deices". When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN.

The PIN shall be as shown in the following example:

Device classes M, B, and S RHA marked devices shall meet the MIL-M-38510 specified RHA levels and shall be marked with the appropriate RHA designator. Device classes Q and V RHA marked devices shall meet the MIL-I-38535 specified RHA levels and shall be marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device.

The device type(s) shall identify the circuit function as follows:

Device type Generic number Circuit function 01 54HC51 2-wide, 2-input and 2-wide, 3-input and-or-invert gates

The device class designator shall be a single letter identifying the product assurance level as follows:

Device class Device requirements documentation M Vendor self-certification to the requirements for non-JAN class B microcircuits in accordance with 1.2.1 of MIL-STD-883 B or S Certification and qualification to MIL-M-38510 Q or V Certification and qualification to MIL-I-38535

The case outline(s) shall be as designated in MIL-STD-1835 and as follows:

Outline letter Descriptive designator Terminals Package style C GDIPI-T14 or CDIP2-T14 14 Dual-in-line 2 CQCC1-N20 20 Square leadless chip carrier

The lead finish shall be as specified in MIL-M-38510 for classes M, B, and S or MIL-I-38535 for classes Q and V. Finish letter "X" shall not be marked on the microcircuit or its packaging. The "X" designation is for use in specifications when lead finishes A, B, and C are considered acceptable and interchangeable without preference.

Supply voltage range (VCC) - - - - - - - - - - - - - - - - - - - - - - −0.5 V dc to +7.0 V dc DC input diode current (IIK) (VI < 0 V, VI > VCC) - - - - - - - - - - ±20 mA DC output diode current (IOK) (VO < 0 V, VO > VCC) - - - - - - - - - - ±20 mA DC drain current, per output (IO) (0 V ≤ VO ≤ VCC) - - - - - - - - - ±25 mA DC VCC or ground current (ICC or IGND) (per pin) - - - - - - - - - - - ±50 mA Maximum power dissipation (PD) - - - - - - - - - - - - - - - - - - - - 500 mW 4/ Storage temperature range (TSTG) - - - - - - - - - - - - - - - - - - - −65°C to +150°C Lead temperature (soldering, 10 seconds) - - - - - - - - - - - - - - - +300°C Thermal resistance, junction-to-case (θJC) - - - - - - - - - - - - - - See MIL-STD-1835 Junction temperature (TJ) - - - - - - - - - - - - - - - - - - - - - - +175°C

Supply voltage range (VCC) - - - - - - - - - - - - - - - - - - - - - - 2.0 V dc to 6.0 V dc Input voltage range - - - - - - - - - - - - - - - - - - - - - - - - - 0.0 V dc to VCC Output voltage range - - - - - - - - - - - - - - - - - - - - - - - - - 0.0 V dc to VCC Case operating temperature (TC) - - - - - - - - - - - - - - - - - - - −55°C to +125°C Maximum low level input voltage (VIL): VCC = 2.0 V - - - - - - - - - - - - - - - - - - - - - - - - - - - - 0.3 V dc VCC = 4.5 V - - - - - - - - - - - - - - - - - - - - - - - - - - - - 0.9 V dc VCC = 6.0 V - - - - - - - - - - - - - - - - - - - - - - - - - - - - 1.2 V dc Minimum high level input voltage (VIH): VCC = 2.0 V - - - - - - - - - - - - - - - - - - - - - - - - - - - - 1.5 V dc VCC = 4.5 V - - - - - - - - - - - - - - - - - - - - - - - - - - - - 3.15 V dc VCC = 6.0 V - - - - - - - - - - - - - - - - - - - - - - - - - - - - 4.2 V dc Input rise and fall times (tr, tf): VCC = 2.0 V - - - - - - - - - - - - - - - - - - - - - - - - - - - - 1000 ns VCC = 4.5 V - - - - - - - - - - - - - - - - - - - - - - - - - - - - 500 ns VCC = 6.0 V - - - - - - - - - - - - - - - - - - - - - - - - - - - - 400 ns Maximum high level output current (IOH) - - - - - - - - - - - - - - - −5.2 mA at VCC = 6.0 V Maximum low level output current (IOL) - - - - - - - - - - - - - - - - +5.2 mA at VCC = 6.0 V

Fault coverage measurement of manufacturing logic tests (MIL-STD-883, test method 5012) - - - - - - - - - - - - - XX percent 5/

intended Use:

Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.

Document History

June 21, 2023
MICROCIRCUIT, DIGITAL, HIGH SPEED CMOS, AND-OR-INVERT GATES, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes. Replaceability....
June 28, 2017
MICROCIRCUIT, DIGITAL, HIGH SPEED CMOS, AND-OR-INVERT GATES, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device class Q and M) and space application (device class V). A choice of case outlines and lead finishes are...
August 7, 2009
MICROCIRCUIT, DIGITAL, HIGH SPEED CMOS, AND-OR-INVERT GATES, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes...
SMD-5962-91513
March 5, 1993
MICROCIRCUIT, DIGITAL, HIGH-SPEED CMOS, AND-OR-INVERT GATES, MONOLITHIC SILICON
This drawing forms a part of a one part - one part number documentation system (see 6.6 herein). Two product assurance classes consisting of military high reliability (device classes B, Q, and M) and...

References

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