DLA - MIL-S-19500/358D
SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE REGULATOR B AND RB, TYPES IN3305 THROUGH 1N3350, IN4549 THROUGH IN4554 JAN, JANTX, JANTXV, AND JANS
| Organization: | DLA |
| Publication Date: | 26 May 1994 |
| Status: | inactive |
| Page Count: | 15 |
scope:
This specification covers the detail requirements for B type (standard polarity) and RB type (reverse polarity), 50 watt, silicon, voltage regulator diodes. Four levels of product assurance are provided for each device type as specified in MIL-S-19500.
See figure 1 (DO-5).
Maximum ratings are as shown in columns 3, 7, and 9 of table V herein and as follows:
Derate PT = 50 W at TC ≥ ±75°C at 0.5 W/°C above TC ≥ ±75°C.
−65°C ≤ TC ≤ 150°C; −65°C ≤ TSTG ≤ +175°C.
Primary electrical characteristics are as shown in columns 1, 8, 11, and 13 of table V herein, and as follows:
Thermal resistance (RΘJC) = 2.0°C/W maximum.
Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document should be addressed to: U.S. Army Laboratory Command, Electronics and Power Sources Command, ATTN: AMSRL-EP-RD, Fort Monmouth, NJ 07703-5601 by using the Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this document or by letter.
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