scope:

This specification covers the detail requirements for monolithic silicon, TTL, low power Schottky, monostable multivibrator microcircuits. Two product assurance classes and a choice of case outlines and lead finishes are provided and are reflected in the complete part number.

The part number shall be in accordance with MIL-M-38510, and as specified herein.

The device type shall be as follows:

Device type Circuit 01 Dual monostable multivibrator, retriggerable, with clear 02 Dual monostable multivibrator, Schmitt trigger inputs, with clear 03 Single monostable multivibrator, retriggerable, with clear

The device class shall be the product assurance level as defined in MIL-M-38510.

The case outline shall be designated as follows:

Outline letter Case outline (see MIL-M-38510, appendix C) A F-1 (14-lead, ¼" × ¼"), flat package B F-3 (14-lead, 3/16" × ¼"), flat package C D-1 (14-lead, ¼" × ¾"), dual-in-line D F-2 (14-lead, ¼" × ⅜"), flat package E D-2 (16-lead, ¼" × ⅞"), dual-in-line F F-5 (16-lead, ¼" × ⅜"), flat package 2 C-2 (20 terminal, .350" × .350") square chip carrier package

Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document should be addressed to Rome Air Development Center (RBE-2), Griffiss AFB, NY 13441, by using the self-addressed Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this document or by letter.

Supply voltage range - - - - - - - - - - - - - −0.5 V dc to 7.0 V dc Input voltage range- - - - - - - - - - - - - - −1.5 V dc to −18 mA dc to 5.5 V dc Storage temperature- - - - - - - - - - - - - - −65°C to 150°C Maximum power dissipation per multivibrator, (P_D) 1/ Device type 01 - - - - - - - - - - - - - - - 110 mW dc Device type 02 - - - - - - - - - - - - - - - 149 mW dc Device type 03 - - - - - - - - - - - - - - - 61 mW dc Lead temperature (soldering 10 seconds)- - - - 300°C Thermal resistance, junction to case (θ_JC): Cases A, B, D, F - - - - - - - - - - - - - - 70°C/W Cases C, E - - - - - - - - - - - - - - - - - 50°C/W Case 2 - - - - - - - - - - - - - - - - - - - 60°C/W Junction temperature (T_J)- - - - - - - - - - - 175°C

Supply voltage - - - - - - - - - - - - - - - - 4.5 V dc minimum to 5.5 V dc maximum Minimum high level input voltage (V_IH) - - - - 2.0 V dc Maximum low level input voltage (V_IL)- - - - - 0.7 V dc Case operating temperature range (T_C)- - - - - −55°C to 125°C Minimum pulse width- - - - - - - - - - - - - - 40 ns Input pulse rise/fall time, device type 02 Schmitt, B input - - - - - - - - - - - - - - 1 V/s minimum Logic, A input - - - - - - - - - - - - - - - 1 V/μs minimum Clear-inactive-state setup time Device type 02 - - - - - - - - - - - - - - - 15 ns minimum External timing resistance, R_ext Device type 01, 03 - - - - - - - - - - - - - 5 kΩ minimum, 180 kΩ maximum Device type 02 - - - - - - - - - - - - - - - 1.4 kΩ minimum, 70 kΩ maximum External timing capacitance, C_ext Device type 01, 03 - - - - - - - - - - - - - No restriction Device type 02 - - - - - - - - - - - - - - - 1,000 μF maximum Output duty cycle, device type 02 R_T = 2 kΩ- - - - - - - - - - - - - - - - - - 50% duty cycle maximum T_T = 70 kΩ - - - - - - - - - - - - - - - - - 90% duty cycle maximum Wiring capacitance, R_ext/C_ext terminal Device type 01, 03 (referenced to GND) - - - 50 pF maximum

intended Use:

Microcircuits conforming to this specification are intended for original equipment design applications and logisitic support of existing equipment.