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DLA - SMD-5962-93155 REV A

MICROCIRCUIT, HYBRID, MEMORY, 256K X 8-BIT, ELECTRICALLY ERASABLE PROGRAMMABLE READ ONLY MEMORY

inactive
Organization: DLA
Publication Date: 14 January 1997
Status: inactive
Page Count: 20
scope:

This drawing documents five product assurance classes, class D (lowest reliability), class E, (exceptions), class G (lowest high reliability), class H (high reliability), and class K, (highest reliability) and a choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of radiation hardness assurance levels are reflected in the PIN.

The PIN shall be as shown in the following example:

Device classes H and K RHA marked devices shall meet the MIL-PRF-38534 specified RHA levels and shall be marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device.

The device type(s) shall identify the circuit function as follows:

Device type Generic number Circuit function Access time 01 WE-256K8-200CQ EEPROM, 256K x 8-bit 200 ns 02 WE-256K8-150CQ EEPROM, 256K x 8-bit 150 ns

This device class designator shall be a single letter identifying the product assurance level as follows:

Device class Device performance documentation D, E, G, H, or K Certification and qualification to MIL-PRF-38534

The case outline(s) shall be as designated in MIL-STD-1835 and as follows:

Outline letter Descriptive designator Terminals Package style X See figure 1 32 Dual-in-line, Dual cavity Y See figure 1 32 Dual-in-line, Dual cavity

The lead finish shall be as specified in MIL-PRF-38534.

Supple voltage range (VCC) .............................. −0.6 V dc to +6.25 V dc Input voltage range ..................................... −0.6 V dc to +6.25 V dc Power dissipation (PD) .................................. 1.6 W Storage temperature range ............................... −65°C to 150°C Lead temperature (soldering, 10 seconds) ................ +300°C Thermal resistance, Junction to case(ΘJC) ............... 28°C/W Data retention .......................................... 10 years minimum

Supply voltage range (VCC) .............................. +4.5 V dc to +5.5 V dc Input low voltage range (VIL) ........................... 0.3 V dc to +0.8 V dc Input high voltage range (VIH) .......................... +2.2 V dc to VCC +0.3 V dc Output voltage, High minimum (VOH) ...................... +2.4 V dc Output voltage, Low maximum (VOL) ....................... +0.45 V dc Case operating temperature range (TC) ................... −55°C to +125°C

intended Use:

Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.

Document History

July 11, 2019
MICROCIRCUIT, HYBRID, MEMORY, 256K X 8-BIT, ELECTRICALLY ERASABLE PROGRAMMABLE READ ONLY MEMORY
Scope. This drawing documents five product assurance classes as defined in paragraph 1.2.3 and MIL-PRF-38534. A choice of case outlines and lead finishes which are available and are reflected in the...
July 11, 2012
MICROCIRCUIT, HYBRID, MEMORY, 256K X 8-BIT, ELECTRICALLY ERASABLE PROGRAMMABLE READ ONLY MEMORY
This drawing documents five product assurance classes as defined in paragraph 1.2.3 and MIL-PRF-38534. A choice of case outlines and lead finishes which are available and are reflected in the Part or...
August 8, 2005
MICROCIRCUIT, HYBRID, MEMORY, 256K X 8-BIT, ELECTRICALLY ERASABLE PROGRAMMABLE READ ONLY MEMORY
This drawing documents five product assurance classes as defined in paragraph 1.2.3 and MIL-PRF-38534. A choice of case outlines and lead finishes which are available and are reflected in the Part or...
SMD-5962-93155 REV A
January 14, 1997
MICROCIRCUIT, HYBRID, MEMORY, 256K X 8-BIT, ELECTRICALLY ERASABLE PROGRAMMABLE READ ONLY MEMORY
This drawing documents five product assurance classes, class D (lowest reliability), class E, (exceptions), class G (lowest high reliability), class H (high reliability), and class K, (highest...
March 26, 1993
MICROCIRCUIT, HYBRID, MEMORY, 256K X 8-BIT, ELECTRICALLY ERASABLE PROGRAMMABLE READ ONLY MEMORY
This drawing forms a part of a one - one part number documentation system (see 6.6 herein). This drawing describes device requirements for hybrid microcircuits to be processed in accordance with...

References

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