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ASTM F980

STANDARD GUIDE FOR THE MEASUREMENT OF RAPID ANNEALING OF NEUTRON- INDUCED DISPLACEMENT DAMAGE IN SEMICONDUCTOR DEVICES (E1-1987)

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Organization: ASTM
Publication Date: 27 March 1986
Status: inactive
Page Count: 7
ICS Code (Semiconductor devices in general): 31.080.01

Document History

December 1, 2016
Standard Guide for Measurement of Rapid Annealing of Neutron-Induced Displacement Damage in Silicon Semiconductor Devices
This guide defines the requirements and procedures for testing silicon discrete semiconductor devices and integrated circuits for rapid-annealing effects from displacement damage resulting from...
December 1, 2010
Standard Guide for Measurement of Rapid Annealing of Neutron-Induced Displacement Damage in Silicon Semiconductor Devices
This guide defines the requirements and procedures for testing silicon discrete semiconductor devices and integrated circuits for rapid-annealing effects from displacement damage resulting from...
December 1, 2010
Standard Guide for Measurement of Rapid Annealing of Neutron-Induced Displacement Damage in Silicon Semiconductor Devices
This guide defines the requirements and procedures for testing silicon discrete semiconductor devices and integrated circuits for rapid-annealing effects from displacement damage resulting from...
January 15, 1992
STANDARD GUIDE FOR THE MEASUREMENT OF RAPID ANNEALING OF NEUTRON- INDUCED DISPLACEMENT DAMAGE IN SEMICONDUCTOR DEVICES (E1-1987)
A description is not available for this item.
ASTM F980
March 27, 1986
STANDARD GUIDE FOR THE MEASUREMENT OF RAPID ANNEALING OF NEUTRON- INDUCED DISPLACEMENT DAMAGE IN SEMICONDUCTOR DEVICES (E1-1987)
A description is not available for this item.
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