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ASTM F980

Standard Guide for Measurement of Rapid Annealing of Neutron-Induced Displacement Damage in Silicon Semiconductor Devices

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Organization: ASTM
Publication Date: 1 December 2010
Status: inactive
Page Count: 7
scope:

This guide defines the requirements and procedures for testing silicon discrete semiconductor devices and integrated circuits for rapid-annealing effects from displacement damage resulting from neutron radiation. This test will produce degradation of the electrical properties of the irradiated devices and should be considered a destructive test. Rapid annealing of displacement damage is usually associated with bipolar technologies. 

Heavy ion beams can also be used to characterize displacement damage annealing (1)2, but ion beams have significant complications in the interpretation of the resulting device behavior due to the associated ionizing dose. The use of pulsed ion beams as a source of displacement damage is not within the scope of this standard.

The values stated in SI units are to be regarded as standard. No other units of measurement are included in this standard. 

This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to consult and establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use.

2 The boldface numbers in parentheses refer to the list of references at the end of this standard.

Document History

December 1, 2016
Standard Guide for Measurement of Rapid Annealing of Neutron-Induced Displacement Damage in Silicon Semiconductor Devices
This guide defines the requirements and procedures for testing silicon discrete semiconductor devices and integrated circuits for rapid-annealing effects from displacement damage resulting from...
December 1, 2010
Standard Guide for Measurement of Rapid Annealing of Neutron-Induced Displacement Damage in Silicon Semiconductor Devices
This guide defines the requirements and procedures for testing silicon discrete semiconductor devices and integrated circuits for rapid-annealing effects from displacement damage resulting from...
ASTM F980
December 1, 2010
Standard Guide for Measurement of Rapid Annealing of Neutron-Induced Displacement Damage in Silicon Semiconductor Devices
This guide defines the requirements and procedures for testing silicon discrete semiconductor devices and integrated circuits for rapid-annealing effects from displacement damage resulting from...
January 15, 1992
STANDARD GUIDE FOR THE MEASUREMENT OF RAPID ANNEALING OF NEUTRON- INDUCED DISPLACEMENT DAMAGE IN SEMICONDUCTOR DEVICES (E1-1987)
A description is not available for this item.
March 27, 1986
STANDARD GUIDE FOR THE MEASUREMENT OF RAPID ANNEALING OF NEUTRON- INDUCED DISPLACEMENT DAMAGE IN SEMICONDUCTOR DEVICES (E1-1987)
A description is not available for this item.

References

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