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DLA - SMD-5962-87661 REV C

MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 16K X 8-BIT ULTRA VIOLET ERASABLE PROGRAMMABLE READ ONLY MEMORY (UVEPROM), MONOLITHIC SILICON

inactive
Organization: DLA
Publication Date: 26 February 1990
Status: inactive
Page Count: 18
scope:

This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices".

The complete part number shall be as shown in the following example:

The device types shall identify the circuit function as follows:

Device type Generic number Circuit function Access time 01 See 6.6 16K × 8-bit UVEPROM 90 ns 02 See 6.6 16K × 8-bit UVEPROM 120 ns 03 See 6.6 16K × 8-bit UVEPROM 150 ns 04 See 6.6 16K × 8-bit UVEPROM 170 ns 05 See 6.6 16K × 8-bit UVEPROM 200 ns 06 See 6.6 16K × 8-bit UVEPROM 250 ns 07 See 6.6 16K × 8-bit UVEPROM 300 ns 08 See 6.6 16K × 8-bit UVEPROM 70 ns

The case outlines shall be as designated in appendix C of MIL-M-38510, and as follows:

Outline letter Case outline X D-10 (28-lead, 1.490" × 0.610" × 0.232"), dual-in-line package 1/ Y C-12 (32-terminal, 0.560" × 0.458" × 0.120"), rectangular leadless chip carrier 1/

Supply voltage range (VCC) 2 - - - - - - - - - - - −0.6 V dc to 6.25 V dc Supply voltage range (VPP) 2 - - - - - - - - - - - −0.6 V dc to 14.0 V dc All input voltage range except (A9) 2/ - - - - - - - −0.6 V dc to 6.25 V dc Input voltage range (A9) 2/ - - - - - - - - - - - - −0.6 V dc to 13.5 V dc Output voltage range 2 - - - - - - - - - - - - - - −0.6 V dc to VCC +1.0 V dc Storage temperature range - - - - - - - - - - - - - −65°C to +150°C Power dissipation - - - - - - - - - - - - - - - - - 300 mW Lead temperature (soldering, 10 seconds) - - - - - - +300°C Thermal resistance, junction-to-case (θJC) - - - - - See MIL-M-38510, appendix C Junction temperature (TJ) - - - - - - - - - - - - - +150°C 3/

Supply voltage range (VCC) 4 - - - - - - - - - - 4.5 V dc to 5.5 V dc Supply voltage range (VPP) 5 - - - - - - - - - - 4.5 V dc to 5.5 V dc High level input voltage range (VIH) - - - - - - - 2.0 V dc to 6.5 V dc (TTL) High level input voltage range (VIH) - - - - - - - VCC −0.2 V dc to VCC +0.2 V dc (CMOS) Low level input voltage range (VIL) - - - - - - - −0.1 V dc to 0.8 V dc (TTL) Low level input voltage range (VIL) - - - - - - - GND −0.2 to GND +0.2 V dc (CMOS) Case operating temperature range (TC) - - - - - - - −55°C to +125°C

intended Use:

Microcircuits conforming to this drawing are intended for use when military specifications do not exist and qualified military devices that will perform the required function are not available for... View More

Document History

January 11, 2017
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 16K X 8-BIT ULTRA VIOLET ERASABLE PROGRAMMABLE READ ONLY MEMORY (UVEPROM), MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
March 30, 2009
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 16K X 8-BIT ULTRA VIOLET ERASABLE PROGRAMMABLE READ ONLY MEMORY (UVEPROM), MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
September 29, 2006
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 16K X 8-BIT ULTRA VIOLET ERASABLE PROGRAMMABLE READ ONLY MEMORY (UVEPROM), MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
December 3, 1999
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 16K X 8-BIT ULTRA VIOLET ERASABLE PROGRAMMABLE READ ONLY MEMORY (UVEPROM), MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for government microcircuit applications (original equipment), design applications, and logistics purposes.
February 15, 1995
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 16K X 8-BIT ULTRA VIOLET ERASABLE PROGRAMMABLE READ ONLY MEMORY (UVEPROM), MONOLITHIC SILICON
A description is not available for this item.
SMD-5962-87661 REV C
February 26, 1990
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 16K X 8-BIT ULTRA VIOLET ERASABLE PROGRAMMABLE READ ONLY MEMORY (UVEPROM), MONOLITHIC SILICON
This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices"....
October 30, 1989
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 16K X 8-BIT ULTRA VIOLET ERASABLE PROGRAMMABLE READ ONLY MEMORY (UVEPROM), MONOLITHIC SILICON
A description is not available for this item.
January 19, 1989
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 16K X 8-BIT ULTRA VIOLET ERASABLE PROGRAMMABLE READ ONLY MEMORY (UVEPROM), MONOLITHIC SILICON
A description is not available for this item.
October 23, 1987
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 16K X 8-BIT ULTRA VIOLET ERASABLE PROGRAMMABLE READ ONLY MEMORY (UVEPROM), MONOLITHIC SILICON
A description is not available for this item.

References

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