scope:

This specification covers the detail requirements for monolithic silicon, TTL, low-power Schottky, quadruple bus buffer gates with three-state outputs. Two product assurance classes and a choice of case outlines and lead finishes are provided and are reflected in the complete part number. Provisions for radiation hardness assurance (RHA) to four radiation test levels is included.

The part number shall be in accordance with MIL-M-38510, and as specified herein.

The device type shall be as follows:

Device type Circuit 01 Quadruple bus buffer gate (inverting control input) 02 Quadruple bus buffer gate (noninverting control input)

The device class shall be the product assurance level as defined in MIL-M-38510.

The case outline shall be designated as follows:

Outline letter Case outline (see MIL-M-38510, appendix C) A F-1 (14-lead, ¼" × ¼"), flat package C D-1 (14-lead, ¼" × ¾"), dual-in-line package D F-2 (14-lead, ¼" × ⅜"), flat package 2 C-2 (20-terminal, .350" × .350"), square chip carrier package

Radiation hardness levels shall be as defined in MIL-M-38510.

Supply voltage range- - - - - - - - - - - - - - - - - −0.5 V dc to +7.0 V dc Input voltage range - - - - - - - - - - - - - - - - - −1.5 V dc at −18 mA to +5.5 V dc Storage temperature range - - - - - - - - - - - - - - −65°C to +150°C Maximum power dissipation (P_D) 1/: Device type 01- - - - - - - - - - - - - - - - - - - 110 mW dc Device type 02- - - - - - - - - - - - - - - - - - - 121 mW dc Lead temperature (soldering, 10 seconds)- - - - - - - +300°C

Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document should be addressed to: Rome Air Development Center (RBE-2), Griffiss AFB, NY 13441, by using the self-addressed Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this document or by letter.

Thermal resistance, junction-to-case (θ_JC): Cases A, C, and D - - - - - - - - - - - - - - - - (See MIL-M-38510, appendix C) Case 2- - - - - - - - - - - - - - - - - - - - - - 60°C/W 2/ Junction temperature (T_J) 3/ - - - +175°C

Low-level output current (I_OL)- - - - - - - - - - - 12 mA maximum. High-level output current (I_OH) - - - - - - - - - - −1.0 mA maximum. Supply voltage (V_CC)- - - - - - - - - - - - - - - - 4.5 V dc minimum to 5,5 V dc maximum. Minimum high level input voltage (V_IH)- - - - - - - +2.0 V maximum. Maximum low level input voltage (V_IL) - - - - - - - +0.7 V maximum. Case operating temperature range (T_C) - - - - - - - −55°C to +125°C.

intended Use:

Microcircuits conforming to this specification are intended for original equipment design applications and logistic support of existing equipment.