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DLA - SMD-5962-87667 REV C

MICROCIRCUIT, HIGH PERFORMANCE CMOS BUS BUFFERS, MONOLITHIC SILICON

active, Most Current
Organization: DLA
Publication Date: 19 March 1993
Status: active
Page Count: 14
scope:

This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices".

The complete PIN shall be as shown in the following example:

The device type(s) shall identify the circuit function as follows:

Device type Generic number Circuit function 01 29C827 High performance CMOS noninverting bus buffer 02 29C828 High performance CMOS inverting bus buffer 03 29C927 High performance CMOS noninverting bus buffer (rotated die) 1/ 04 29C928 High performance CMOS inverting bus buffer rotated die) 1/ 05 29C827A High performance CMOS noninverting bus buffer 06 29C828A High performance CMOS inverting bus buffer

The case outline(s) shall be as designated in MIL-STD-1835 and as follows:

Outline letter Descriptive designator Terminals Package style L GDIP3-T24 or CDIP4-T24 24 Dual-in-line K GDFP2-F24 or CDFP3-F24 24 Flat pack 3 CQCCl-N28 28 Leadless chip carrier

Supply voltage range - - - - - - - - - - - - - - - - −0.5 V dc to +7.0 V dc Input voltage range - - - - - - - - - - - - - - - - −0.5 V dc to +6.0 V dc Storage temperature range - - - - - - - - - - - - - −65°C to +150°C Maximum power dissipation (PD) 2/ - 500 mW DC output voltage range - - - - - - - - - - - - - - −0.5 V dc to +6.0 V dc DC output diode current: Into output - - - - - - - +50 mA DC output diode current: Out of output - - - - - - - −50 mA DC input diode current: Into input - - - - - - - - +20 mA DC input diode current: Out of input - - - - - - - −20 mA DC output current in accordance with PDN (Isink): Device types 01-04 - - - - - - - - - - - - - - - - +48 mA (2×IOL) DC output current in accordance with PDN (Isource): Device types 01-04 - - - - - - - - - - - - - - - - −30 mA (2×IOH) DC output current in accordance with PDN (Isink): Device types 05 and 06 - - - - - - - - - - - - - - +100 mA DC output current in accordance with PDN (Isource): Device types 05 and 06 - - - - - - - - - - - - - - −100 mA Total dc ground current - - - - - - - - - - - - - - (n×IOL + m×ICCT) mA 3/ Total dc VCC current - - - - - - - - - - - - - - - - (n×IOH + m×ICCT) mA 3/ Lead temperature (soldering, 10 seconds) - - - - - - +300°C Thermal resistance, junction-to-case (ΘJC): Cases K, L, and 3 - - - - - - - - - - - - - - - - See MIL-STD-1835 Junction temperature (TJ) - - - - - - - - - - - - - 150°C

Supply voltage (VCC)- - - - - - - - - - - - - - - - +4.5 V dc to +5.5 V dc Minimum high level input voltage (VIH) - - - - - - 2.0 V dc Maximum low level input voltage (VIL) - - - - - - - 0.8 V dc Case operating temperature range (TC) - - - - - - - −55°C to +125°C

intended Use:

Microcircuits conforming to this drawing are intended for use when military specifications do not exist and qualified military devices that will perform the required function are not available for... View More

Document History

SMD-5962-87667 REV C
March 19, 1993
MICROCIRCUIT, HIGH PERFORMANCE CMOS BUS BUFFERS, MONOLITHIC SILICON
This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices"....
November 13, 1992
MICROCIRCUIT, HIGH PERFORMANCE CMOS BUS BUFFERS, MONOLITHIC SILICON
A description is not available for this item.
September 27, 1988
MICROCIRCUIT, HIGH PERFORMANCE CMOS BUS BUFFERS, MONOLITHIC SILICON
A description is not available for this item.
September 16, 1987
MICROCIRCUIT, HIGH PERFORMANCE CMOS BUS BUFFERS, MONOLITHIC SILICON
A description is not available for this item.

References

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