DLA - SMD-5962-91593
MICROCIRCUIT, MEMORY, DIGITAL, BICMOS, 16K X 4 STATIC RANDOM ACCESS MEMORY (SRAM), MONOLITHIC SILICON
| Organization: | DLA |
| Publication Date: | 13 May 1993 |
| Status: | inactive |
| Page Count: | 25 |
scope:
This drawing forms a pert of a one part - one part number documentation system (see 6.6 herein). Two product assurance classes consisting of military high reliability (device classes B, Q, and M) and space application (device classes S and V) and a choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). Device class M microcircuits represent non-JAN class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices". When available, a choice of radiation hardness assurance (RHA) levels are reflected in the PIN.
The PIN shall be as shown in the following example:
Device classes m, B, and S RHA marked devices shall meet the MIL-M-38510 specified RHA levels and shall be marked with the appropriate RHA designator. Device classes Q and V RHA marked devices shall meet the MIL-I-38535 specified RHA levels and shall be marked with the appropriate RHA designator.A dash (-) indicates a non-RHA device.
The device types shall identify the circuit function as follows:
Device type Generic number Circuit function Access time 01 7B164 16K × 4 SRAM 15 ns 02 7B164 16K × 4 SRAM 12 ns 03 7B164 16K × 4 SRAM 10 ns 04 7B166 16K × 4 SRAM with [O bar][E bar] 15 ns 05 7B166 16K × 4 SRAM with [O bar][E bar] 12 ns 06 7B166 16K × 4 SRAM with [O bar][E bar] 10 ns
The device class designator shall be a single letter identifying the product assurance level (see 6.6 herein) as follows:
Device class Device requirements documentation M Vendor self-certification to the requirements for non-JAN class B microcircuits in accordance with 1.2.1 of MIL-STD-883 B or S Certification and qualification to MIL-M-38510 Q or V Certification and qualification to MIL-I-38535
The case outlines shall be as designated in MIL-STD-1835 and as follows:
Outline letter Descriptive designator Terminals Package style L GDIP3-T24 or CDIP4-T24 24 dual-in-line K GDFP2-F24 or CDFP3-F24 24 flat pack X CQCC4-N28 28 rectangular leadless chip carrier Y See figure 1 22 dual-in-line Z See figure 1 22 rectangular leadless chip carrier
The lead finish shall be as specified in MIL-M-38510 for classes M, B, and S or MIL-I-38535 for classes Q and V. Finish letter "X" shall not be marked on the microcircuit or its packaging. The "X" designation is for use in specifications when lead finishes A, B, and C are considered acceptable and interchangeable without preference.
Supply voltage range to ground potential (VCC) - - - - - −0.5 V dc to +7.0 V dc DC output current - - - - - - - - - - - -- - - - - - - - 20 mA Maximum power dissipation - - - - - - - - - - - - - - - 0.800 w Lead temperature (soldering, 10 seconds) - - - - - - - - +260°C Thermal resistance, junction-to-case (θJC): Cases L, K, and X - - - - - - - - - - - - - - - - - - See MIL-STD-1835 Cases Y and Z - - - -- - - - - - - - - - - - - - - - 11°C/W 2/ Junction temperature (Tj) - - - - - - - - - - - - - - - +175°C Storage temperature range (TSTG) - - - - - - - - - - - - −65°C to 150°C Temperature under bias - - - - - - - - - - - - - - - - - −55°C to +125°C
Supply voltage (VCC) - - - - - - - - - - - - - - - - - - - - +4.5 V dc minimum to +5.5 V dc maximum Ground voltage (GND) - - - - - - - - - - - - - - - - - - 0 V dc Input high voltage (VIH) - - - - - - - - - - - - - - - - 2.2 V dc to VCC V dc Input low voltage (VIL) - - - - - - - - - - - - - - - - - - −0.5 V dc to 0.8 V dc 3/ Case operating temperature range (TC) - - - - - - - −55°C to +125°C
Fault coverage measurement of manufacturing Logic tests (MIL-STD-883, test method 5012)- - - - - - - - - 4/ percent
intended Use:
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, end logistics purposes.
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