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DLA - SMD-5962-88726 REV B

MICROCIRCUIT, MEMORY, DIGITAL, CMOS, ULTRAVIOLET ERASABLE, PROGRAMMABLE LOGIC ARRAY, MONOLITHIC SILICON

inactive
Organization: DLA
Publication Date: 21 October 1994
Status: inactive
Page Count: 23
scope:

This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices".

The complete PIN shall be as shown in the following example:

The device type(s) shall identify the circuit function as follows:

Device type Generic number Circuit function Address access time 01 V750 22-input 10-output 40 ns and-or-logic array 02 V750 22-input 10-output 35 ns and-or-logic array 03 V750 22-input 10-output 25 ns and-or-logic array 04 V750 22-input 10-output 20 ns and-or-logic array 06 V750L 22-input 10-output 35 ns and-or-logic array 07 V750L 22-input 10-output 25 ns and-or-logic array 08 V750B 22-input 10-output 10 ns and-or-logic array 09 V750B 22-input 10-output 15 ns and-or-logic array 10 V750B 22-input 10-output 25 ns and-or-logic array 11 V750BL 22-input 10-output 15 ns and-or-logic array 12 V750BL 22-input 10-output 25 ns and-or-logic array

The case outline(s) shall be as designated in MIL-STD-1835 and as follows:

Outline letter Descriptive designator Terminals Package style L GDIP3-T24 24 dual-in-line package 1/ 3 CQCC1-N28 28 square chip carrier 1/ X GDFP1-F24 24 flat pack package 1/ Y CQCC1-J28 28 J leaded chip carrier 1/

The lead finish shall be as specified in MIL-STD-883 (see 3.1 herein). Finish letter "X" shall not be marked on the microcircuit or its packaging. The "X" designation is for use in specifications when lead finishes A, B, and C are considered acceptable and interchangeable without preference.

Supply voltage range - - - - - - - - - - - - - - - - - −0.5 V dc to +7.0 V dc Input voltage range - - - - - - - - - - - - - - - - - −2.0 V dc to +7.0 V dc 3/ Output voltage applied - - - - - - - - - - - - - - - - −0.5 V dc to +7.0 V dc 3/ Output sink current - - - - - - - - - - - - - - - - - 16 mA Thermal resistance, junction-to-case (ΘJC) - - - - - - See MIL-STD-1835 Maximum power dissipation (PD) 4/ - - - - - - - - - - 1.2 W Maximum junction temperature - - - - - - - - - - - - - +175°C Lead temperature (soldering, 10 seconds maximum) - - - +300°C

Supply voltage (VCC) - - - - - - - - - - - - - - - 4.5 V dc to 5.5 V dc High level input voltage (VIH) - - - - - - - - - - 2.0 V dc minimum Low level input voltage (VIL)- - - - - - - - - - - 0.8 V dc maximum

intended Use:

Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.

Document History

October 11, 2017
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, ULTRAVIOLET ERASABLE, PROGRAMMABLE LOGIC ARRAY, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes
March 17, 2010
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, ULTRAVIOLET ERASABLE, PROGRAMMABLE LOGIC ARRAY, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
June 22, 2007
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, ULTRAVIOLET ERASABLE, PROGRAMMABLE LOGIC ARRAY, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
September 6, 2002
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, ULTRAVIOLET ERASABLE, PROGRAMMABLE LOGIC ARRAY, MONOLITHIC SILICON
A description is not available for this item.
February 22, 2000
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, ULTRAVIOLET ERASABLE, PROGRAMMABLE LOGIC ARRAY, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
SMD-5962-88726 REV B
October 21, 1994
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, ULTRAVIOLET ERASABLE, PROGRAMMABLE LOGIC ARRAY, MONOLITHIC SILICON
This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices"....
April 21, 1992
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, ULTRAVIOLET ERASABLE, PROGRAMMABLE LOGIC ARRAY, MONOLITHIC SILICON
This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices"....
September 16, 1988
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, ULTRAVIOLET ERASABLE, PROGRAMMABLE LOGIC ARRAY, MONOLITHIC SILICON
A description is not available for this item.
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