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DLA - SMD-5962-94557

MICROCIRCUIT, MEMORY, DIGITAL, CMOS 1MEG X 8 BIT EEPROM, MONOLITHIC SILICON

inactive
Organization: DLA
Publication Date: 28 July 1994
Status: inactive
Page Count: 21
scope:

This drawing forms a part of a one part - one part number documentation system (see 6.6 herein). Two product assurance classes consisting of military high reliability (device classes Q and M) and space application (device class V), and a choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). Device class M microcircuits represent non-JAN class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices". When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN.

The PIN shall be as shown in the following example:

Device class M RHA marked devices shall meet the MIL-I-38535 appendix A specified RHA levels and shall be marked with the appropriate RHA designator. Device classes Q and V RHA marked devices shall meet the MIL-I-38535 specified RHA levels and shall be marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device.

The device type(s) shall identify the circuit function as follows:

Device type Generic number 1 Circuit function Access time Endurance 01 28F008 1M × 8 CMOS EEPROM 120 ns 10,000 cycles 02 28F008 1M × 8 CMOS EEPROM 100 ns 10,000 cycles

The device class designator shall be a single letter identifying the product assurance level as follows:

Device class Device requirements documentation M Vendor self-certification to the requirements for non-JAN class B microcircuits in accordance with 1.2.1 of MIL-STD-883 Q or V Certification and qualification to MIL-I-38535

The case outline(s) shall be as designated in MIL-STD-1835 and as follows:

Outline letter Descriptive designator Terminals Package style Q GDIP1-T40 or CDIP2-T40 40 Dual-in-line

The lead finish shall be as specified in MIL-STD-883 (see 3.1 herein) for class M or MIL-I-38535 for classes Q and V. Finish letter "X" shall not be marked on the microcircuit or its packaging. The "X" designation is for use in specifications when lead finishes A, B, and C are considered acceptable and interchangeable without preference.

Supply voltage range (VCC) 3/ . . . . . . . . . . . . . . . . . . . −2.0 V dc to +7.0 V dc Storage temperature range (Tstg) . . . . . . . . . . . . . . . . . . −65°C to +150°C Maximum power dissipation (PD) . . . . . . . . . . . . . . . . . . . 1.0 W Lead temperature (soldering, 10 seconds) . . . . . . . . . . . . . . +300°C Junction temperature (TJ) 4/ . . . . . . . . . . . . . . . . . . . +150°C Thermal resistance, junction-to-case (ΘJC) (case outline Q) . . . . See MIL-STD-1835 Voltage on any pin with respect to ground 3/ . . . . . . . . . . . . −2.0 V dc to +7.0 V dc Voltage on pin A9 with respect to ground 5/ . . . . . . . . . . . . −2.0 V dc to +13.5 V dc VPP supply voltage with respect to ground 5/ . . . . . . . . . . . . −2.0 V dc to +14.0 V dc Output short circuit current 6/ . . . . . . . . . . . . . . . . . . 100 mA Data retention . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 years, minimum Endurance (All device types) . . . . . . . . . . . . . . . . . . . . 10,000 cycles/byte, minimum

Supply voltage range (VCC) . . . . . . . . . . . . . . . . . . . . +4.5 V dc to +5.5 V dc Operating temperature range (Tcase) . . . . . . . . . . . . . . . −55°C to +125°C Low level input voltage range (VIL) . . . . . . . . . . . . . . . −0.5 V dc to +0.8 V dc High level input voltage range (VIH) . . . . . . . . . . . . . . . +2.0 V dc to VCC +0.5 V dc High level input voltage range, CMOS (VIH) . . . . . . . . . . . . +2.0 V dc to VCC +0.5 V dc Chip clear (VP) . . . . . . . . . . . . . . . . . . . . . . . . . 11.4 V dc to 12.6 V dc

Fault coverage measurement of manufacturing logic tests (MIL-STD-883, test method 5012) . . . . . . . . . . 99 percent

intended Use:

Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.

Microcircuits... View More

Document History

May 18, 2017
MICROCIRCUIT, MEMORY, DIGITAL, CMOS 1MEG X 8 BIT EEPROM, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device class Q) and space application (device class V). A choice of case outlines and lead finishes are...
November 20, 2009
MICROCIRCUIT, MEMORY, DIGITAL, CMOS 1MEG X 8 BIT EEPROM, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes...
November 21, 1994
MICROCIRCUIT, MEMORY, DIGITAL, CMOS 1MEG X 8 BIT EEPROM, MONOLITHIC SILICON
This drawing forms a part of a one part - one part number documentation system (see 6.6 herein). Two product assurance classes consisting of military high reliability (device classes Q and M) and...
SMD-5962-94557
July 28, 1994
MICROCIRCUIT, MEMORY, DIGITAL, CMOS 1MEG X 8 BIT EEPROM, MONOLITHIC SILICON
This drawing forms a part of a one part - one part number documentation system (see 6.6 herein). Two product assurance classes consisting of military high reliability (device classes Q and M) and...

References

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