scope:

This drawing documents two products assurances class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part of Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN.

The PIN is as shown in the following example:

Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked meet the MIL-PRF-38535, appendix specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device.

The device type(s) identify the circuit function as follows:

Device type Generic number Circuit function 01 HS-6254RH Radiation hardened, dielectrically isolated, ultra high frequency all NPN transistor array

The device class designator is a single letter identifying the product assurance level as follows:

Device class Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 complaint, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certification and qualification to MIL-PRF-38535

The case outline(s) are as designated in MIL-STD-1835 and as follows:

Outline letter Descriptive designator Terminals Package style E GDIP1-T-16 16 Dual-in-line X CDFP4-F-16 16 Flat pack

The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M.

Collector to emitter voltage (open base) .......................... +8V Collector to base voltage (shorted base) .......................... +12 V dc Emitter to base voltage (reversed bias) ........................... +5.5 V dc Collector current at 100% duty cycle, 175°C ....................... 11.3 mA Junction temperature (T_J) ......................................... +175°C Storage temperature range ......................................... −65°C ≤ T_A ≤ +150°C Lead temperature (soldering, 10 seconds) .......................... +265°C Thermal resistance, junction-to-case (θ_JC): Case E ........................................................ 30°C/W Case X ........................................................ 28°C/W Thermal resistance, junction-to-ambient (θ_JA): Case E ........................................................ 90°C/W Case X ........................................................ 120°C/W

Ambient operating temperature range (T_A) ......................... −55°C ≤ T_A ≤ +125°C Radiation features: Total dose ...................................................... >300 Krads (SI) Latch up ........................................................ None 2/

intended Use: