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DLA - SMD-5962-88610 REV C

MICROCIRCUIT, MEMORY, DIGITAL, CMOS 2K X 16 DUAL PORT SRAM, MONOLITHIC SILICON

inactive
Organization: DLA
Publication Date: 16 September 1993
Status: inactive
Page Count: 24
scope:

This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices".

The complete PIN shall be as shown in the following example:

The device type(s) shall identify the circuit function as follows:

Device type Generic number Circuit function Access time 01 (See 6.6) 2K × 16 dual port CMOS SRAM (master) 90 ns 02 (See 6.6) 2K × 16 dual port CMOS SRAM (slave) 90 ns 03 (see 6.6) 2K × 16 dual port CMOS SRAM (master) 70 ns 04 (see 6.6) 2K × 16 dual port CMOS SRAM (slave) 70 ns 05 (see 6.6) 2K × 16 dual port CMOS SRAM (master) 55 ns 06 (see 6.6) 2K × 16 dual port CMOS SRAM (slave) 55 ns 07 (See 6.6) 2K × 16 dual port CMOS SRAM (master) 90 ns 08 (See 6.6) 2K × 16 dual port CMOS SRAM (slave) 90 ns 09 (see 6.6) 2K × 16 dual port CMOS SRAM (master) 70 ns 10 (see 6.6) 2K × 16 dual port CMOS SRAM (slave) 70 ns 11 (see 6.6) 2K × 16 dual port CMOS SRAM (master) 55 ns 12 (see 6.6) 2K × 16 dual port CMOS SRAM (slave) 55 ns

The case outline(s) shall be as designated in MIL-STD-1835 and as follows:

Outline letter Descriptive designator Terminals Package style U See figure 1 68 flat pack X See figure 1 68 dual-in-line package Y CQCC1-N68 68 square leadless chip carrier Z CMGA3-PN 68 pin grid array

The lead finish shall be as specified in MIL-M-38510. Finish letter "X" shall not be marked on the microcircuit or its packaging. The "X" designation is for use in specifications when lead finishes A, B, and C are considered acceptable and interchangeable without preference.

Supply voltage range - - - - - - - - - - - - - - - - −0.5 V dc to +7.0 V dc Input voltage range - - - - - - - - - - - - - - - - −0.5 V dc to +6.0 V dc DC output current - - - - - - - - - - - - - - - - - 50 mA Storage temperature range - - - - - - - - - - - - - −65°C to +150°C Maximum power dissipation (PD) - - - - - - - - - - - 2.0 W Lead temperature (soldering, 10 seconds) - - - - - - +260°C Thermal resistance, junction-to-case (ΘJC): Cases U and X - - - - - - - - - - - - - - - - - - 37°C/W Cases Y and Z - - - - - - - - - - - - - - - - - - See MIL-STD-1835 Junction temperature (TJ)- - - - - - - - - - - - - - +150°C 1/

Supply voltage range (VCC) - - - - - - - - - - - - - 4.5 V dc to 5.5 V dc High level input voltage range (VIH) - - - - - - - - 2.2 V dc to 6.0 V dc Low level input voltage range (VIL)- - - - - - - - - −0.5 V dc to +0.8 V dc 2/ Case operating temperature range (TC)- - - - - - - - −55°C to +125°C

intended Use:

Microcircuits conforming to this drawing are intended for use when military specifications do not exist and qualified military devices that will perform the required function are not available for... View More

Document History

April 13, 2023
MICROCIRCUIT, MEMORY, DIGITAL, CMOS 2K X 16 DUAL PORT SRAM, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
January 27, 2016
MICROCIRCUIT, MEMORY, DIGITAL, CMOS 2K X 16 DUAL PORT SRAM, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
July 11, 2007
MICROCIRCUIT, MEMORY, DIGITAL, CMOS 2K X 16 DUAL PORT SRAM, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
December 1, 1999
MICROCIRCUIT, MEMORY, DIGITAL, CMOS 2K X 16 DUAL PORT SRAM, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
March 30, 1994
MICROCIRCUIT, MEMORY, DIGITAL, CMOS 2K X 16 DUAL PORT SRAM, MONOLITHIC SILICON
A description is not available for this item.
SMD-5962-88610 REV C
September 16, 1993
MICROCIRCUIT, MEMORY, DIGITAL, CMOS 2K X 16 DUAL PORT SRAM, MONOLITHIC SILICON
This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices"....
May 14, 1992
MICROCIRCUIT, MEMORY, DIGITAL, CMOS 2K X 16 DUAL PORT SRAM, MONOLITHIC SILICON
A description is not available for this item.
October 16, 1989
MICROCIRCUIT, MEMORY, DIGITAL, CMOS 2K X 16 DUAL PORT SRAM, MONOLITHIC SILICON
A description is not available for this item.
December 12, 1988
MICROCIRCUIT, MEMORY, DIGITAL, CMOS 2K X 16 DUAL PORT SRAM, MONOLITHIC SILICON
A description is not available for this item.

References

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