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NPFC - MIL-M-38510/172

MICROCIRCUITS, DIGITAL, CMOS, AND-OR-INVERT, EXCLUSIVE-OR, EXCLUSIVE-NOR GATES, MONOLITHIC SILICON, POSITIVE LOGIC

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Organization: NPFC
Publication Date: 30 April 1984
Status: inactive
Page Count: 40
scope:

This specification covers the detail requirements for monolithic silicon, CMOS logic microcircuits. Two product assurance classes and a choice of case outlines and lead finishes are provided for each type and are reflected in the complete part number.

The part number shall be in accordance with MIL-M-38510.

The device type shall be as follows:

Device type Circuit 01 Dual 2-wide, 2-input AND-OR-invert gate 02 Expandable 4-wide, 2-input AND-OR invert gate 03 Quad exclusive-OR gate 04 Quad exclusive-NOR gate

The device class shall be the product assurance level as defined in MIL-M-38510.

The case outline shall be designated as follows:

Outline letter Case outline (see MIL-M-38510, appendix C) A F-1 (14-lead, ¼" × ¼"), flat package C D-1 (14-lead, ¼" × ¾"), dual-in-line package D F-2 (14-lead, ¼" × ⅜"), flat package X F-1 (14-lead, ¼" × ¼"), flat package, except A dimension = 0.1" (2.54 mm) max. Y F-2 (14-lead, ¼" × ⅜"), flat package, except A dimension = 0.1" (2.54 mm) max.

NOTES

1. As an exception to nickel plate or undercoating paragraph of MIL-M-38510, for case outlines X and Y only, the leads of bottom brazed ceramic packages (i.e. configuration 2 of case outlines F-1 or F-2) may have electroless nickel undercoating which shall be 50 to 200 microinches (1.27 to 5.08 µm) thick provided the lead finish is hot solder dip (i.e. finish letter A) and provided that, after any lead forming, an additional hot solder dip coating is applied which shall extend from the outer tip of the lead to no more than 0.015 inch (0.38 mm) from the package edge.

2. For bottom or side brazed packages, case outlines X and Y only, the S1 dimension may go to .000 inch (.00 mm) minimum. Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document should be addressed to: National Aeronautics and Space Administration, George C. Marshall Space Flight Center, ATTN: EGO2, Marshall Space Flight Center, AL 35812, using the self-addressed Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this document or by letter.

Supply voltage range (VDD - VSS)- - - - - - −0.5 V to +18 V Input current (each input) - - - - - - - - ±10 mA Input voltage range - - - - - - - - - - - - (VSS - 0.5) ≤ VI.≤ (VDD + 0.5) Storage temperature range - - - - - - - - - −65°C to +175°C Maximum power dissipation (PD) - - - - - - 200 mW Lead temperature (soldering, 10 seconds)- - +300°C Thermal resistance, Junction-to-case - - - (see MIL-M-38510, Appendix C) Junction temperature (TJ) - - - - - - - - - +175°C

Supply voltage(VDD - VSS) - - - - - - - - - - 4.5 V dc to 15 V dc Input low (VIL) voltage range - - - - - - - - 0 - 1.5 Vdc at VDD = 5 V dc, VOL = 10% VDD, VOH = 90% VDD; 0 - 4.0 V dc @ VDD = 15 V dc, 0-2.0 V dc @ VDD = 10 V dc Input high (VIH) voltage range - - - - - - - 3.5 - 5.0 V dc at VDD = 5 V dc, VOL = 10% VDD, VOH = 90% VDD; 11.0 - 15.0 V dc @ VDD = 15 V dc, 8.0 - 10.0 V dc @ $ VDD = 10 V dC Ambient operating temperature range (TA)- - - −55°c to +125°C

intended Use:

Microcircuits conforming to this specification are intended for original equipment design application and logisitic support of existing equipment.

Document History

Microcircuits, Digital, CMOS, and-or-Invert, Exclusive-or, Exclusive-nor Gates, Monolithic Silicon, Positive Logic
A description is not available for this item.
October 29, 2018
Microcircuits, Digital, CMOS, and-or-Invert, Exclusive-or, Exclusive-nor Gates, Monolithic Silicon, Positive Logic
A description is not available for this item.
January 17, 2014
Microcircuits, Digital, CMOS, and-or-Invert, Exclusive-or, Exclusive-nor Gates, Monolithic Silicon, Positive Logic
A description is not available for this item.
April 2, 2009
Microcircuits, Digital, CMOS, and-or-Invert, Exclusive-or, Exclusive-nor Gates, Monolithic Silicon, Positive Logic
This specification covers the detail requirements for monolithic silicon, CMOS, logic microcircuits. Two product assurance classes and a choice of case outlines, lead finishes, and radiation hardness...
June 4, 2004
MICROCIRCUITS, DIGITAL, CMOS, AND-OR-INVERT, EXCLUSIVE-OR, EXCLUSIVE-NOR GATES, MONOLITHIC SILICON, POSITIVE LOGIC
This specification covers the detail requirements for monolithic silicon, CMOS, logic microcircuits. Two product assurance classes and a choice of case outlines, lead finishes, and radiation hardness...
April 23, 1999
MICROCIRCUITS, DIGITAL, CMOS, AND-OR-INVERT, EXCLUSIVE-OR, EXCLUSIVE-NOR GATES, MONOLITHIC SILICON, POSITIVE LOGIC
A description is not available for this item.
August 9, 1996
MICROCIRCUITS, DIGITAL, CMOS, AND-OR-INVERT, EXCLUSIVE-OR, EXCLUSIVE-NOR GATES, MONOLITHIC SILICON, POSITIVE LOGIC
A description is not available for this item.
August 31, 1988
MICROCIRCUITS, DIGITAL, CMOS, AND-OR-INVERT, EXCLUSIVE-OR, EXCLUSIVE-NOR GATES, MONOLITHIC SILICON, POSITIVE LOGIC
A description is not available for this item.
MIL-M-38510/172
April 30, 1984
MICROCIRCUITS, DIGITAL, CMOS, AND-OR-INVERT, EXCLUSIVE-OR, EXCLUSIVE-NOR GATES, MONOLITHIC SILICON, POSITIVE LOGIC
This specification covers the detail requirements for monolithic silicon, CMOS logic microcircuits. Two product assurance classes and a choice of case outlines and lead finishes are provided for each...
September 30, 1982
MICROCIRCUITS, DIGITAL, CMOS, AND-OR-INVERT, EXCLUSIVE-OR, EXCLUSIVE-NOR GATES, MONOLITHIC SILICON, POSITIVE LOGIC
A description is not available for this item.
April 9, 1982
MICROCIRCUITS, DIGITAL, CMOS, AND-OR-INVERT, EXCLUSIVE-OR, EXCLUSIVE-NOR GATES, MONOLITHIC SILICON, POSITIVE LOGIC
A description is not available for this item.
November 10, 1981
MICROCIRCUITS, DIGITAL, CMOS, AND-OR-INVERT, EXCLUSIVE-OR, EXCLUSIVE-NOR GATES, MONOLITHIC SILICON, POSITIVE LOGIC
A description is not available for this item.
May 13, 1980
MICROCIRCUITS, DIGITAL, CMOS, AND-OR-INVERT, EXCLUSIVE-OR, EXCLUSIVE-NOR GATES, MONOLITHIC SILICON, POSITIVE LOGIC
A description is not available for this item.
October 29, 1979
MICROCIRCUITS, DIGITAL, CMOS, AND-OR-INVERT, EXCLUSIVE-OR, EXCLUSIVE-NOR GATES, MONOLITHIC SILICON, POSITIVE LOGIC
A description is not available for this item.
February 23, 1979
MICROCIRCUITS, DIGITAL, CMOS, AND-OR-INVERT, EXCLUSIVE-OR, EXCLUSIVE-NOR GATES, MONOLITHIC SILICON, POSITIVE LOGIC
A description is not available for this item.
January 22, 1979
MICROCIRCUITS, DIGITAL, CMOS, AND-OR-INVERT, EXCLUSIVE-OR, EXCLUSIVE-NOR GATES, MONOLITHIC SILICON, POSITIVE LOGIC
A description is not available for this item.
June 9, 1978
MICROCIRCUITS, DIGITAL, CMOS, AND-OR-INVERT, EXCLUSIVE-OR, EXCLUSIVE-NOR GATES, MONOLITHIC SILICON, POSITIVE LOGIC
A description is not available for this item.

References

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