JEDEC JESD 35-1
General Guidelines for Designing Test Structures for the Wafer-Level Testing of Thin Dielectrics
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| Organization: | JEDEC |
| Publication Date: | 1 September 1995 |
| Status: | active |
| Page Count: | 26 |
scope:
This addendum expands the usefulness of the Standard 35 (JESD35) by detailing the various sources of measurement error that could effect the test results obtained by the ramped tests described in JESD35. Each source of error is described and its implications on test structure design is noted. This addendum can be used as a guide when designing test structures for the qualification and characterization of thin oxide reliability, specifically, by implementing accelerated voltage or current ramp tests.
Document History
JEDEC JESD 35-1
September 1, 1995
General Guidelines for Designing Test Structures for the Wafer-Level Testing of Thin Dielectrics
This addendum expands the usefulness of the Standard 35 (JESD35) by detailing the various sources of measurement error that could effect the test results obtained by the ramped tests described in...
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