scope:
This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices".
The complete PIN shall be as shown in the following example:
The device type(s) shall identify the circuit function as follows:
Device type Generic number Circuit
01 4094B 8-stage shift register/latch with three-state outputs
02 14094B 8-stage shift register/latch with three-state outputs
The case outline(s) shall be as designated in MIL-STD-1835 and as follows:
Outline letter Descriptive designator Terminals Package style
E GDIP1-T16 or CDIP2-T16 16 Dual-in-line package
F GDFP2-F16 or CDFP3-F16 16 Flat package
The lead finish shall be as specified in MIL-STD-883 (see 3.1 herein). Finish letter "X" shall not be marked on the microcircuit or its packaging. The "X" designation is for use in specifications when lead finishes A, B, and C are considered acceptable and interchangeable without preference.
Supply voltage range (VDD):
Device type 01 ...................................... −0.5 V dc to +20 V dc
Device type 02 ...................................... −0.5 V dc to +18 V dc
Input voltage range .................................... −0.5 V dc to VDD + 0.5 V dc
DC input current ...................................... ±10 mA
Storage temperature range ............................ −65°C to +150°C
Maximum power dissipation (PD) ........................ 500 mW dc 1/
Lead temperature (soldering, 10 seconds) .............. +300°C
Thermal resistance, junction-to-case (ΘJC) ............ See MIL-STD-1835
Junction temperature (TJ) .............................. +175°C
Supply voltage range (VDD):
Device type 01 ...................................... +3.0 V dc to +18 V dc
Device type 02 ...................................... +3.0 V dc to +15 V dc
VSS ................................................... 0.0 V dc
Case operating temperature range (TC) .................. −55°C to +125°C
Minimum setup time (tS):
TC = +25°C, VDD = 5 V dc ............................ 125 ns
TC = −55°C, +125°C, VDD = 5 V dc ..................... 188 ns
TC = +25°C, VDD = 10 V dc ............................ 55 ns
TC = −55°C, +125°C, VDD = 10 V dc .................... 83 ns
TC = +25°C, VDD = 15 V dc ............................ 35 ns
TC = −55°C, +125°C, VDD = 15 V dc .................... 53 ns
Minimum clock pulse width, (tw1):
TC = +25°C, VDD = 5 V dc ............................ 200 ns
TC = −55°C, +125°C, VDD = 5 V dc ..................... 300 ns
TC = +25°C, VDD = 10 V dc ............................ 100 ns
TC = −55°C, +125°C, VDD = 10 V dc .................... 150 ns
TC = +25°C, VDD = 15 V dc ............................ 83 ns
TC = −55°C, +125°C, VDD = 15 V dc .................... 125 ns
Minimum strobe pulse width, (tw2):
TC = +25°C, VDD = 5 V dc ............................ 200 ns
TC = −55°C, +125°C, VDD = 5 V dc ..................... 300 ns
TC = +25°C, VDD = 10 V dc ............................ 80 ns
TC = −55°C, +125°C, VDD = 10 V dc .................... 120 ns
TC = +25°C, VDD = 15 V dc ............................ 70 ns
TC = −55°C, +125°C, VDD = 15 V dc .................... 105 ns
Maximum input clock frequency, (fMAX):
TC = +25°C, VDD = 5 V dc ............................ 1.25 MHz minimum
TC = −55°C, +125°C, VDD = 5 V dc ..................... 0.83 MHz minimum
TC = +25°C, VDD = 10 V dc ............................ 2.5 MHz minimum
TC = −55°C, +125°C, VDD = 10 V dc .................... 1.66 MHz minimum
TC = +25°C, VDD = 15 V dc ............................ 3.0 MHz minimum
TC = −55°C, +125°C, VDD = 15 V dc .................... 2.0 MHz minimum
Input rise or fall times, (tr, t1):
TC = +25°C, VDD = 5 V dc ............................ 15.0 µs
TC = −55°C, +125°C, VDD = 5 V dc:
Device type 01 .................................... 22.5 µs
Device type 02 .................................... 15 µs
TC = +25°C, VDD = 10 V dc ............................ 5.0 µs
TC = −55°C, +125°C, VDD = 10 V dc:
Device type 01 .................................... 7.5 µs
Device type 02 .................................... 5.0 µs
TC = +25°C, VDD = 15 V dc ............................ 5.0 µs
TC = −55°C, +125°C, VDD = 15 V dc:
Device type 01 .................................... 7.5 µs
Device type 02 .................................... 5.0 µs