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DLA - SMD-5962-77025 REV G

MICROCIRCUIT, DIGITAL, CMOS, 8-STAGE SHIFT REGISTER/LATCH WITH THREE- STATE OUTPUTS, MONOLITHIC SILICON

inactive
Organization: DLA
Publication Date: 10 February 1994
Status: inactive
Page Count: 21
scope:

This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices".

The complete PIN shall be as shown in the following example:

The device type(s) shall identify the circuit function as follows:

Device type Generic number Circuit 01 4094B 8-stage shift register/latch with three-state outputs 02 14094B 8-stage shift register/latch with three-state outputs

The case outline(s) shall be as designated in MIL-STD-1835 and as follows:

Outline letter Descriptive designator Terminals Package style E GDIP1-T16 or CDIP2-T16 16 Dual-in-line package F GDFP2-F16 or CDFP3-F16 16 Flat package

The lead finish shall be as specified in MIL-STD-883 (see 3.1 herein). Finish letter "X" shall not be marked on the microcircuit or its packaging. The "X" designation is for use in specifications when lead finishes A, B, and C are considered acceptable and interchangeable without preference.

Supply voltage range (VDD): Device type 01 ...................................... −0.5 V dc to +20 V dc Device type 02 ...................................... −0.5 V dc to +18 V dc Input voltage range .................................... −0.5 V dc to VDD + 0.5 V dc DC input current ...................................... ±10 mA Storage temperature range ............................ −65°C to +150°C Maximum power dissipation (PD) ........................ 500 mW dc 1/ Lead temperature (soldering, 10 seconds) .............. +300°C Thermal resistance, junction-to-case (ΘJC) ............ See MIL-STD-1835 Junction temperature (TJ) .............................. +175°C

Supply voltage range (VDD): Device type 01 ...................................... +3.0 V dc to +18 V dc Device type 02 ...................................... +3.0 V dc to +15 V dc VSS ................................................... 0.0 V dc Case operating temperature range (TC) .................. −55°C to +125°C Minimum setup time (tS): TC = +25°C, VDD = 5 V dc ............................ 125 ns TC = −55°C, +125°C, VDD = 5 V dc ..................... 188 ns TC = +25°C, VDD = 10 V dc ............................ 55 ns TC = −55°C, +125°C, VDD = 10 V dc .................... 83 ns TC = +25°C, VDD = 15 V dc ............................ 35 ns TC = −55°C, +125°C, VDD = 15 V dc .................... 53 ns

Minimum clock pulse width, (tw1): TC = +25°C, VDD = 5 V dc ............................ 200 ns TC = −55°C, +125°C, VDD = 5 V dc ..................... 300 ns TC = +25°C, VDD = 10 V dc ............................ 100 ns TC = −55°C, +125°C, VDD = 10 V dc .................... 150 ns TC = +25°C, VDD = 15 V dc ............................ 83 ns TC = −55°C, +125°C, VDD = 15 V dc .................... 125 ns Minimum strobe pulse width, (tw2): TC = +25°C, VDD = 5 V dc ............................ 200 ns TC = −55°C, +125°C, VDD = 5 V dc ..................... 300 ns TC = +25°C, VDD = 10 V dc ............................ 80 ns TC = −55°C, +125°C, VDD = 10 V dc .................... 120 ns TC = +25°C, VDD = 15 V dc ............................ 70 ns TC = −55°C, +125°C, VDD = 15 V dc .................... 105 ns Maximum input clock frequency, (fMAX): TC = +25°C, VDD = 5 V dc ............................ 1.25 MHz minimum TC = −55°C, +125°C, VDD = 5 V dc ..................... 0.83 MHz minimum TC = +25°C, VDD = 10 V dc ............................ 2.5 MHz minimum TC = −55°C, +125°C, VDD = 10 V dc .................... 1.66 MHz minimum TC = +25°C, VDD = 15 V dc ............................ 3.0 MHz minimum TC = −55°C, +125°C, VDD = 15 V dc .................... 2.0 MHz minimum Input rise or fall times, (tr, t1): TC = +25°C, VDD = 5 V dc ............................ 15.0 µs TC = −55°C, +125°C, VDD = 5 V dc: Device type 01 .................................... 22.5 µs Device type 02 .................................... 15 µs TC = +25°C, VDD = 10 V dc ............................ 5.0 µs TC = −55°C, +125°C, VDD = 10 V dc: Device type 01 .................................... 7.5 µs Device type 02 .................................... 5.0 µs TC = +25°C, VDD = 15 V dc ............................ 5.0 µs TC = −55°C, +125°C, VDD = 15 V dc: Device type 01 .................................... 7.5 µs Device type 02 .................................... 5.0 µs

intended Use:

Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.

Document History

February 27, 2018
MICROCIRCUIT, DIGITAL, CMOS, 8-STAGE SHIFT REGISTER/LATCH WITH THREE-STATE OUTPUTS, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
April 20, 2011
MICROCIRCUIT, DIGITAL, CMOS, 8-STAGE SHIFT REGISTER/LATCH WITH THREE-STATE OUTPUTS, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
March 14, 2005
MICROCIRCUIT, DIGITAL, CMOS, 8-STAGE SHIFT REGISTER/LATCH WITH THREE- STATE OUTPUTS, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
April 13, 2001
MICROCIRCUIT, DIGITAL, CMOS, 8-STAGE SHIFT REGISTER/LATCH WITH THREE- STATE OUTPUTS, MONOLITHIC SILICON
A description is not available for this item.
SMD-5962-77025 REV G
February 10, 1994
MICROCIRCUIT, DIGITAL, CMOS, 8-STAGE SHIFT REGISTER/LATCH WITH THREE- STATE OUTPUTS, MONOLITHIC SILICON
This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices"....

References

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