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DLA - SMD-5962-88706

MICROCIRCUIT, DIGITAL, ADVANCED CMOS, OCTAL BUFFER/LINE DRIVER, WITH THREE-STATE OUTPUTS, MONOLITHIC SILICON

inactive
Organization: DLA
Publication Date: 30 January 1989
Status: inactive
Page Count: 14
scope:

This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices".

The complete part number shall be as shown in the following example:

The device type shall identify the circuit function as follows:

Device type Generic number Circuit function 0l 54AC541 Octal buffer/line driver with three-state outputs

The case outlines shall be as designated in appendix C of MIL-M-38510, and as follows:

Outline letter Case outline R D-8 (20-lead, 1.060" × .310" × .200"), dual-in-line package S F-9 (20-lead .540 × .300" × .100"), flat package 2 C-2 (20-terminal .358" × .358" × .100"), square chip carrier package

Supply voltage range 1/ - - - - - - - - - - - - - - −0.5 V dc minimumto +6.0 V dc maximum DC input voltage range 1/ - - - - - - - - - - - - - −0.5 V dc to VCC +0.5 V dc DC output voltage range 1/ - - - - - - - - - - - - −0.5 V dc to VCC +0.5 V dc DC input diode current (IIK) - - - - - - - - - - - - ±20 mA DC output diode current (IOK) - - - - - - - - - - - ±50 mA DC output current - - - - - - - - - - - - - - - - - ±100 mA Storage temperature range - - - - - - - - - - - - - −65°C to 150°C Maximum power dissipation (PD) - - - - - - - - - - - 500 mW Lead temperature (soldering, 10 seconds) - - - - - - +300°C Thermal resistance, junction-to-case (θJC) - - - - - See MIL-M-38510, appendix C Junction temperature (TJ) 2/ - - - - - - - - - - - +175°C

Supply voltage range (VCC) 1/ - - - - - - - - - - - 3.0 V dc minimumto 5.5 V dc maximum Input voltage range - - - - - - - - - - - - - - - - 0.0 V dc to VCC Output voltage range - - - - - - - - - - - - - - - - 0.0 V dc to VCC Case operating temperature range (TC) - - - - - - - −55°C to +125°C Input rise or fall rate: VCC = 3.5 V, 5.5 V - - - - - - - - - - - - - - - - 0 to 8 ns/V

intended Use:

Microcircuits conforming to this drawing are intended for use when military specifications do not exist and qualified military devices that will perform the required function are not available for... View More

Document History

October 24, 2023
MICROCIRCUIT, DIGITAL, ADVANCED CMOS, RADIATION HARDENED, OCTAL BUFFER / LINE DRIVER WITH THREE-STATE OUTPUTS, MONOLITHIC SILICON
A description is not available for this item.
July 25, 2023
MICROCIRCUIT, DIGITAL, ADVANCED CMOS, RADIATION HARDENED, OCTAL BUFFER / LINE DRIVER, WITH THREE-STATE OUTPUTS, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes. Replaceability....
July 27, 2018
MICROCIRCUIT, DIGITAL, ADVANCED CMOS, RADIATION HARDENED, OCTAL BUFFER / LINE DRIVER, WITH THREE-STATE OUTPUTS, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes...
December 5, 2013
MICROCIRCUIT, DIGITAL, ADVANCED CMOS, RADIATION HARDENED, OCTAL BUFFER / LINE DRIVER, WITH THREE-STATE OUTPUTS, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes...
November 29, 2011
MICROCIRCUIT, DIGITAL, ADVANCED CMOS, OCTAL BUFFER / LINE DRIVER, WITH THREE-STATE OUTPUTS, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes...
June 7, 2005
MICROCIRCUIT, DIGITAL, ADVANCED CMOS, OCTAL BUFFER/LINE DRIVER, WITH THREE-STATE OUTPUTS, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes...
August 6, 2001
MICROCIRCUIT, DIGITAL, ADVANCED CMOS, OCTAL BUFFER/LINE DRIVER, WITH THREE-STATE OUTPUTS, MONOLITHIC SILICON
A description is not available for this item.
September 19, 2000
MICROCIRCUIT, DIGITAL, ADVANCED CMOS, OCTAL BUFFER/LINE DRIVER, WITH THREE-STATE OUTPUTS, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes. Microcircuits covered by...
December 22, 1999
MICROCIRCUIT, DIGITAL, ADVANCED CMOS, OCTAL BUFFER/LINE DRIVER, WITH THREE-STATE OUTPUTS, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes. Microcircuits covered by...
SMD-5962-88706
January 30, 1989
MICROCIRCUIT, DIGITAL, ADVANCED CMOS, OCTAL BUFFER/LINE DRIVER, WITH THREE-STATE OUTPUTS, MONOLITHIC SILICON
This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices"....

References

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