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DLA - SMD-5962-92078 REV E

MICROCIRCUIT, HYBRID, MEMORY, DIGITAL, STATIC RANDOM ACCESS MEMORY, CMOS, 512K X 8-BIT

inactive
Organization: DLA
Publication Date: 24 February 1997
Status: inactive
Page Count: 20
scope:

This drawing documents five product assurance classes, class D (lowest reliability), class E, (exceptions), class G (lowest high reliability), class H (high reliability), and class K, (highest reliability) and a choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of radiation hardness assurance levels are reflected in the PIN.

The PIN shall be as shown in the following example:

Device classes H and K RHA marked devices shall meet the MIL-PRF-38534 specified RHA levels and shall be marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device.

The device type(s) shall identify the circuit function as follows:

Device type Generic number Circuit function Access time 01 WS512K8-120CQ SRAM, 512K × 8-bit 120 ns 02 WS512K8-100CQ SRAM, 512K × 8-bit 100 ns 03 WS512K8-85CQ SRAM, 512K × 8-bit 85 ns 04 WS512K8-70CQ SRAM, 512K × 8-bit 70 ns 05 WS512K8-55CQ SRAM, 512K × 8-bit 55 ns 06 WS512K8-45CQ SRAM, 512K × 8-bit 45 ns 07 WS512K8-35CQ SRAM, 512K × 8-bit 35 ns 08 WS512K8-25CQ SRAM, 512K × 8-bit 25 ns 09 WS512K8-20CQ SRAM, 512K × 8-bit 20 ns

This device class designator shall be a single letter identifying the product assurance level as follows:

Device class Device performance documentation D, E, G, H, or K Certification and qualification to MIL-PRF-38534

The case outline(s) shall be as designated in MIL-STD-1835 and as follows:

Outline letter Descriptive designator Terminals Package style T See figure 1 32 Dual-in-line, single cavity X See figure 1 32 Dual-in-line, dual cavity Y See figure 1 32 Dual-in-line, dual cavity, gull wing leads

The lead finish shall be as specified in MIL-PRF-38534.

Supply voltage range (VCC) .............................. −0.5 V dc to +7.0 V dc Signal voltage range (any pin) .......................... −0.5 V dc to +7.0 V dc Power dissipation (PD) .................................. 1 W Storage temperature range ............................... −65°C to + 150°C Lead temperature (soldering, 10 seconds) ................ +300°C

Supply voltage range (VCC) .............................. +4.5 V dc to +5.5 V dc Input low voltage range (VIL) ........................... −0.5 V dc to +0.8 V dc Input high voltage range (VIH) .......................... +2.2 V dc to VCC +0.3 V dc Output low voltage, maximum (VOL) ....................... +0.4 V dc Output high voltage, minimum (VOH)....................... +2.4 V dc Case operating temperature range (TC) ................... −55°C to +125°C

intended Use:

Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.

Document History

January 23, 2018
MICROCIRCUIT, HYBRID, MEMORY, DIGITAL, STATIC RANDOM ACCESS MEMORY, CMOS, 512K x 8-BIT
This drawing documents five product assurance classes as defined in paragraph 1.2.3 and MIL-PRF-38534. A choice of case outlines and lead finishes which are available and are reflected in the Part or...
July 8, 2008
MICROCIRCUIT, HYBRID, MEMORY, DIGITAL, STATIC RANDOM ACCESS MEMORY, CMOS, 512K x 8-BIT
This drawing documents five product assurance classes as defined in paragraph 1.2.3 and MIL-PRF-38534. A choice of case outlines and lead finishes which are available and are reflected in the Part or...
April 9, 2001
MICROCIRCUIT, HYBRID, MEMORY, DIGITAL, STATIC RANDOM ACCESS MEMORY, CMOS, 512K X 8-BIT
A description is not available for this item.
July 3, 2000
MICROCIRCUIT, HYBRID, MEMORY, DIGITAL, STATIC RANDOM ACCESS MEMORY, CMOS, 512K X 8-BIT
This drawing documents five product assurance classes, class D (lowest reliability), class E, (exceptions), class G (lowered high reliability), class H (high reliability), and class K, (highest...
June 23, 1998
MICROCIRCUIT, HYBRID, MEMORY, DIGITAL, STATIC RANDOM ACCESS MEMORY, CMOS, 512K X 8-BIT
This drawing documents five product assurance classes, class D (lowest reliability), class E, (exceptions), class G (lowest high reliability), class H (high reliability), and class K, (highest...
SMD-5962-92078 REV E
February 24, 1997
MICROCIRCUIT, HYBRID, MEMORY, DIGITAL, STATIC RANDOM ACCESS MEMORY, CMOS, 512K X 8-BIT
This drawing documents five product assurance classes, class D (lowest reliability), class E, (exceptions), class G (lowest high reliability), class H (high reliability), and class K, (highest...
July 19, 1995
MICROCIRCUIT, HYBRID, MEMORY, DIGITAL, STATIC RANDOM ACCESS MEMORY, CMOS, 512K X 8-BIT
This drawing forms a part of a one part - one part number documentation system (see 6.6 herein). This drawing describes device requirements for hybrid microcircuits to be processed in accordance with...
September 2, 1994
MICROCIRCUIT, HYBRID, MEMORY, DIGITAL, STATIC RANDOM ACCESS MEMORY, CMOS, 512K X 8-BIT
This drawing forms a part of a one part - one part number documentation system (see 6.6 herein). This drawing describes device requirements for hybrid microcircuits to be processed in accordance with...
January 25, 1994
MICROCIRCUIT, HYBRID, MEMORY, DIGITAL, STATIC RANDOM ACCESS MEMORY, CMOS, 512K X 8-BIT
This drawing forms a part of a one part - one part number documentation system (see 6.6 herein). This drawing describes device requirements for hybrid microcircuits to be processed in accordance with...
January 25, 1993
MICROCIRCUIT, HYBRID, MEMORY, DIGITAL, STATIC RANDOM ACCESS MEMORY, CMOS, 512K X 8-BIT
A description is not available for this item.
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