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DLA - SMD-5962-87651 REV A

MICROCIRCUIT, MEMORY, DIGITAL, CMOS 1K X 8 PROGRAMMABLE READ ONLY MEMORY (PROM), MONOLITHIC SILICON

inactive
Organization: DLA
Publication Date: 5 November 1993
Status: inactive
Page Count: 16
scope:

This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices".

The complete part number shall be as shown in the following example:

The device types shall identify the circuit function as follows:

Device type Generic number Circuit function Access time 01 see 6.4 1K × 8 CMOS PROM (three-state) 45 ns

The case outlines shall be as designated in appendix C of MIL-M-38510, and as follows:

Outline letter Case outline J D-3 (24-lead, 1.290" × .610" × .225"), dual in-line package K F-6 (24-lead, .640" × .420" × .090"), flat package L D-9 (24-lead, 1.280" × .310" × .200"), dual in-line package 3 C-4 (28-terminal, .460" × .460" × .100"), square chip carrier package

Supply voltage range (VCC) - - - - - - - - - - - - - −0.5 V dc to +7.0 V dc DC voltage applied to Outputs in High Z state - - - −0.5 V dc to +7.0 V dc DC Input voltage - - - - - - - - - - - - - - - - - - −3.0 V dc to +7.0 V dc DC program voltage - - - - - - - - - - - - - - - - - +14.0 V dc Maximum power dissipation 1/ - - - - - - - - - - - 1.0 W Lead temperature (soldering, 10 seconds) - - - - - - +300°C Thermal resistance, junction-to-case (θJC): - - - - See MIL-M-38510, appendix C Junction temperature (TJ) 2/ - - - - - - - - - - - - +150°C Storage temperature range - - - - - - - - - - - - - −65°C to +150°C Temperature under bias - - - - - - - - - - - - - - - −55°C to +125°C

Supply voltage (VCC) - - - - - - - - - - - - - - - - +4.5 V dc to +5.5 V dc Ground voltage (GND) - - - - - - - - - - - - - - - - 0 V dc Input high voltage (VIH) - - - - - - - - - - - - - - 2.0 V dc to VCC Input low voltage (VIL) - - - - - - - - - - - - - - −0.5 V dc to +0.8 V dc Case operating temperature range (TC) - - - - - - - −55°C to +125°C

intended Use:

Microcircuits conforming to this drawing are intended for use when military specifications do not exist and qualified military devices that will perform the required function are not available for... View More

Document History

April 15, 2021
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 1K X 8 PROGRAMMABLE READ ONLY MEMORY (PROM),MONOLITHIC SILICON
Scope. This drawing describes device requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A.
March 20, 2015
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 1K X 8 PROGRAMMABLE READ ONLY MEMORY (PROM), MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
September 13, 2006
MICROCIRCUIT, MEMORY, DIGITAL, CMOS 1K X 8 PROGRAMMABLE READ ONLY MEMORY (PROM), MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
August 19, 1994
MICROCIRCUIT, MEMORY, DIGITAL, CMOS 1K X 8 PROGRAMMABLE READ ONLY MEMORY (PROM), MONOLITHIC SILICON
This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices"....
SMD-5962-87651 REV A
November 5, 1993
MICROCIRCUIT, MEMORY, DIGITAL, CMOS 1K X 8 PROGRAMMABLE READ ONLY MEMORY (PROM), MONOLITHIC SILICON
This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices"....
May 23, 1988
MICROCIRCUIT, MEMORY, DIGITAL, CMOS 1K X 8 PROGRAMMABLE READ ONLY MEMORY (PROM), MONOLITHIC SILICON
A description is not available for this item.

References

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