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DLA - SMD-5962-88678 REV A

MICROCIRCUIT, MEMORY, DIGITAL, CMOS, UV ERASABLE, PROGRAMMABLE LOGIC ARRAY, MONOLITHIC SILICON

inactive
Organization: DLA
Publication Date: 13 December 1989
Status: inactive
Page Count: 14
scope:

This drawing describes device requirements for class B microcircuits in accordance MIL-STD-883 "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices".

The complete part number shall, be as, shown in the following example:

The device types shall identify the circuit function as follows:

Device type Generic number Circuit function tPD 01, 05, 09 C16L8 16-input, 8-output, AND-OR inverted logic array 40, 30, 20 ns 02, 06, 10 C16R8 16-input, 8-output, registered, AND-OR logic array 40, 30, 20 ns 03, 07, 11 C16R6 16-input, 6-output, registered, AND-OR logic array 40, 30, 20 ns 04, 08, 12 C16R4 16-input, 4-output, registered, AND-OR logic array 40, 30, 20 ns

The case outlines shall be as designated in appendix C of MIL-M-38510, and as follows:

Outline letter Case outline R D-8 (20-lead, 1.060" × .310" × .200"), dual-in-line package 1/ S F-9 (20-lead, .540" × .300" × .100"), flat package 1/ X C-2A (20-terminal, .358" × .358" × .075"), square chip carrier package 1/

Supply voltage range - - - - - - - - - - - - - - - −0.5 V dc to +7.0 V dc DC voltage applied to outputs in high Z- - - - - - −0.5 V dc to +7.0 V dc DC input voltage - - - - - - - - - - - - - - - - - −3.0 V dc to +7.0 V dc Output sink current- - - - - - - - - - - - - - - - 24 mA Thermal resistance, junction-to-case (θJC): Cases R, S, and X - - - - - - - - - - - - - - - See MIL-M-38510, appendix C Maximum power dissipation (PD) 2/ - - - - - - - - 1.0 W Maximum junction temperature (TJ) - - - - - - - - +175°C Lead temperature (soldering, 10 seconds maximum) - +260°C Storage temperature range - - - - - - - - - - - - −65°C to +150°C Temperature under bias range - - - - - - - - - - - −55°C to +125°C

Supply voltage (VCC) - - - - - - - - - - - - - - - 4.5 V dc to 5.5 V dc High level input voltage (VIH) - - - - - - - - - - 2.0 V dc minimum Low level input voltage (VIL)- - - - - - - - - - - 0.8 V dc maximum Case operating temperature range (TC) - - - - - - −55°C to +125°C

Microcircuits conforming to this drawing are intended for use when military specifications do not exist and qualified military devices that will perform the required function are not available for OEM application. When a military specification exists and the product covered by this drawing has been qualified for listing on QPL-38510, the device specified herein will be inactivated and will not be used for new design. The QPL-38510 product shall be the preferred item for all applications.

Document History

September 9, 2019
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, UV ERASABLE, PROGRAMMABLE LOGIC ARRAY, MONOLITHIC SILICON
Scope. This drawing describes device requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A.
May 1, 2019
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, UV ERASABLE, PROGRAMMABLE LOGIC ARRAY, MONOLITHIC SILICON
Scope. This drawing describes device requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A.
May 19, 2014
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, UV ERASABLE, PROGRAMMABLE LOGIC ARRAY, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
November 15, 2005
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, UV ERASABLE, PROGRAMMABLE LOGIC ARRAY, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
SMD-5962-88678 REV A
December 13, 1989
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, UV ERASABLE, PROGRAMMABLE LOGIC ARRAY, MONOLITHIC SILICON
This drawing describes device requirements for class B microcircuits in accordance MIL-STD-883 "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices". The complete...
September 26, 1988
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, UV ERASABLE, PROGRAMMABLE LOGIC ARRAY, MONOLITHIC SILICON
A description is not available for this item.

References

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