scope:

This drawing forms a part of a one part - one part number documentation system (see 6.6 herein). Two product assurance classes consisting of military high reliability (device classes Q and M) and space application (device class V), and a choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). Device class M microcircuits represent non-JAN class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices". When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN.

The PIN shall be as shown in the following example:

Device class M RHA marked devices shall meet the MIL-I-38535 appendix A specified RHA levels and shall be marked with the appropriate RHA designator. Device classes Q and V RHA marked devices shall meet the MIL-I-38535 specified RHA levels and shall be marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device.

The device type(s) shall identify the circuit function as follows:

Device type Generic number Circuit function 01 HS-26C32RH Radiation hardened quad differential line receiver

The device class designator shall be a single letter identifying the product assurance level as follows:

Device Device requirements documentation M Vendor self-certification to the requirements for non-JAN class B microcircuits in accordance with 1.2.1 of MIL-STD-883 Q or V Certification and qualification to MIL-1-38535

The case outline(s) shall be as designated in MIL-STD-1835 and as follows:

Outline letter Descriptive designator Terminals Package style E CDIP2-T16 16 Dual-in-line X CDFP4-F16 16 Flat pack

The lead finish shall be as specified in MIL-STD-883 (see 3.1 herein) for class M or MIL-I-38535 for classes Q and V. Finish letter "X" shall not be marked on the microcircuit or its packaging. The "X" designation is for use in specifications when lead finishes A, B, and C are considered acceptable and interchangeable without preference.

Supply voltage . . . . . . . . . . . . . . . . . . . . −0.5 V to +7.0 V Differential input voltage . . . . . . . . . . . . . . ±12 V Common mode range . . . . . . . . . . . . . . . . . . . ±12 V Enable pins input voltage . . . . . . . . . . . . . . . −0.5 V to V_DD + 0.5 V DC drain current (any one output) . . . . . . . . . . . ±25 mA DC diode input current enable pin . . . . . . . . . . . ±1 µA Storage temperature range . . . . . . . . . . . . . . . −65°C to +150°C Lead temperature (soldering, 10 seconds) . . . . . . . +300°C Maximum package power dissipation at +125°C: E package . . . . . . . . . . . . . . . . . . . . . . 0.6 W X package . . . . . . . . . . . . . . . . . . . . . . 0.5 W Maximum device power dissipation (P_D) 2/. . . . . . . . 0.32 W Thermal resistance, junction-to-case (Θ_JC): E package . . . . . . . . . . . . . . . . . . . . . . 20°C/W X package . . . . . . . . . . . . . . . . . . . . . . 26°C/W Thermal resistance, junction-to-ambient (Θ_JA): E package . . . . . . . . . . . . . . . . . . . . . . 80°C/W X package . . . . . . . . . . . . . . . . . . . . . . 103°C/W

Operating voltage range . . . . . . . . . . . . . . . . +4.5 v to +5.5 v Common mode range . . . . . . . . . . . . . . . . . . . ±7.0 v Input Low voltage (V_IL) . . . . . . . . . . . . . . . . 0 V to 0.3 V_DD max Input high voltage (V_IH) . . . . . . . . . . . . . . . V_DD to 0.7 V_DD min Input rise and fall time . . . . . . . . . . . . . . . 500 ns max Ambient operating temperature range (T_A) . . . . . . . −55°C to +125°C Radiation features: 3/ SEP effective let no upset . . . . . . . . . . . . . >100 [MEV(mg/cm²)] Neutron . . . . . . . . . . . . . . . . . . . . . . . >1 × 10¹⁴ neutrons/cm² Total dose . . . . . . . . . . . . . . . . . . . . . >300 Krads (Si) Dose rate upset . . . . . . . . . . . . . . . . . . . >5 × 10⁸ Rads(Si)/sec Dose rate survivability . . . . . . . . . . . . . . . >5 × 10¹¹ Rads(Si)/sec

intended Use: