DLA - SMD-5962-90538 REV A
MICROCIRCUIT, LINEAR, QUAD SCHOTTKY DIODE ARRAY, MONOLITHIC SILICON
| Organization: | DLA |
| Publication Date: | 11 June 1993 |
| Status: | inactive |
| Page Count: | 9 |
scope:
This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices".
The complete PIN shall be as shown in the following example:
The device type(s) shall identify the circuit function as follows:
Device type Generic number Circuit function 01 UC1611 Quad schottky diode array, 1 amp
The case outlines(s) shall be as designated in appendix C of MIL-M-38510, and as follows:
Outline letter Case outline P D-4 (8 lead, .405" × .310" × .200"), dual-in-line package
Peak inverse voltage (per diode) - - - - - - - - - 45 V dc Diode-to-diode voltage - - - - - - - - - - - - - 75 V dc Peak forward current - - - - - - - - - - - - - - 1 A Power dissipation (PD) 2/ - - - - - - - - - - - 1 W Lead temperature (soldering, 10 seconds) - - - - +300°C Thermal resistance, junction-to-case (ΘJC) - - - See MIL-M-38510, appendix C Junction temperature (TJ) - - - - - - - - - - - 150°C
Ambient operating temperature range (TA) - - - - −55°C ≤ TA ≤ +125°C
intended Use:
Microcircuits conforming to this drawing are intended for use when military specifications do not exist and qualified military devices that will perform the required function are not available for... View More
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