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DLA - SMD-5962-96843

MICROCIRCUIT, LINEAR, VOLTAGE REFERENCE DIODE, 1.2 VOLTS, MONOLITHIC SILICON

inactive
Organization: DLA
Publication Date: 10 April 1996
Status: inactive
Page Count: 11
scope:

This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN.

The PIN is as shown in the following example:

Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device.

The device type(s) identify the circuit function as follows:

Device type Generic number Circuit function 01 LM113 Voltage reference diode 02 LM113-1 Voltage reference diode 03 LM113-2 Voltage reference diode

The device class designator is a single letter identifying the product assurance level as follows:

Device class Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certification and qualification to MIL-PRF-38535

The case outline(s) are as designated in MIL-STD-1835 and as follows:

Outline letter Descriptive designator Terminals Package style X See figure 1 2 TO-46 can

The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M.

Reverse current . . . . . . . . . . . . . . . . . . . 50 mA Forward current . . . . . . . . . . . . . . . . . . . 50 mA Storage temperature range (TSTG). . . . . . . . . . . −65°C to 150°C Maximum power dissipation (PD) . . . . . . . . . . . 100 mW 2/ Lead temperature (soldering, 10 seconds,) . . . . . . +300°C Junction temperature . . . . . . . . . . . . . . . . +150°C Thermal resistance, junction-to-case (θJC). . . . . . 80°C/W Thermal resistance, junction-to-ambient (θJA) . . . . 440°C/W

Ambient operating temperature (TA). . . . . . . . . . −55°C to 125°C

intended Use:

Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.

Microcircuits... View More

Document History

August 3, 2016
MICROCIRCUIT, LINEAR, VOLTAGE REFERENCE DIODE, 1.2 VOLTS, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device class Q) and space application (device class V). A choice of case outlines and lead finishes are...
June 3, 2008
MICROCIRCUIT, LINEAR, VOLTAGE REFERENCE DIODE, 1.2 VOLTS, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes...
April 14, 2000
MICROCIRCUIT, LINEAR, VOLTAGE REFERENCE DIODE, 1.2 VOLTS, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes. Microcircuits covered by...
January 15, 1999
MICROCIRCUIT, LINEAR, VOLTAGE REFERENCE DIODE, 1.2 VOLTS, MONOLITHIC SILICON
A description is not available for this item.
November 4, 1996
MICROCIRCUIT, LINEAR, VOLTAGE REFERENCE DIODE, 1.2 VOLTS, MONOLITHIC SILICON
A description is not available for this item.
SMD-5962-96843
April 10, 1996
MICROCIRCUIT, LINEAR, VOLTAGE REFERENCE DIODE, 1.2 VOLTS, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes...

References

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