DLA - SMD-5962-89876 REV A
MICROCIRCUIT, LINEAR, TRANSISTOR ARRAY, MONOLITHIC SILICON
| Organization: | DLA |
| Publication Date: | 27 October 1992 |
| Status: | inactive |
| Page Count: | 11 |
scope:
This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices".
The complete PIN shall be as shown in the following example:
The device type(s) shall identify the circuit function as follows:
Device type Generic number Circuit function 01 2023 7 gate darlington transistor array
The case outline(s) shall be as designated in MIL-STD-1835, and as follows:
Outline letter Descriptive designator Terminals Package style E GDIP1-T16 or CDIP2-T16 16 Dual-in-line
Output voltage (VCE) - - - - - - - - - - - - - - - - 95 V dc Input voltage (VIN)- - - - - - - - - - - - - - - - - 30 V dc Peak output current (IOUT) - - - - - - - - - - - - - 500 mA Ground terminal current (IGND) - - - - - - - - - - - 3.0 A Continuous input current (IIN) - - - - - - - - - - - 25 mA Power dissipation (PD) 1/ - - - - - - - - - - - - - 1.0 W Storage temperature range- - - - - - - - - - - - - - −65°C to +150°C Junction temperature (TJ)- - - - - - - - - - - - - - +175°C Thermal resistance, junction-to-ambient (ΘJA)- - - - 80°C/W
Ambient operating temperature range (TA) - - - - - - −55°C to +125°C
intended Use:
Microcircuits conforming to this drawing are intended for use when military specifications do not exist and qualified military devices that will perform the required function are not available for... View More
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