NPFC - MIL-PRF-19500/707
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON TYPES 2N7500U5, 2N7501U5, AND 2N7502U5 JANTXVR AND JANSR
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| Organization: | NPFC |
| Publication Date: | 6 February 2002 |
| Status: | inactive |
| Page Count: | 23 |
scope:
This specification covers the performance requirements for a N-Channel, enhancement-mode, MOSFET, radiation hardened (total dose and Single Event Effects (SEE)), power transistor. Two levels of product assurance are provided for each device type as specified in MIL-PRF-19500, with avalanche energy maximum rating (E AS) and maximum avalanche current (I AS).
intended Use:
The notes specified in MIL-PRF-19500 are applicable to this specification.
Document History
June 1, 2020
TRANSISTOR, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) N-CHANNEL, SILICON, TYPES 2N7500U5, 2N7501U5, 2N7502U5, AND 2N7562U5 JANTXVR AND JANSR
Scope.
This specification covers the performance requirements for a N-Channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor for use in...
February 11, 2015
TRANSISTOR, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) N-CHANNEL, SILICON, TYPES 2N7500U5, 2N7501U5, AND 2N7502U5, JANTXVR AND JANSR
This specification covers the performance requirements for a N-Channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor for use in...
March 17, 2011
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7500U5, 2N7501U5, AND 2N7502U5, JANTXVR AND JANSR
This specification covers the performance requirements for a N-Channel, enhancement-mode, MOSFET, radiation hardened (total dose and Single Event Effects (SEE)), power transistor. Two levels of...
September 6, 2007
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7500U5, 2N7501U5, AND 2N7502U5, JANTXVR AND JANSR
This specification covers the performance requirements for a N-Channel, enhancement-mode, MOSFET, radiation hardened (total dose and Single Event Effects (SEE)), power transistor. Two levels of...
April 11, 2007
Semiconductor Device, Field Effect Radiation Hardened (Total Dose and Single Event Effects) Transistor, N-Channel, Silicon Types 2N7500U5, 2N7501U5, and 2N7502U5 JANTXVR and JANSR
This specification covers the performance requirements for a N-Channel, enhancement-mode, MOSFET, radiation hardened (total dose and Single Event Effects (SEE)), power transistor. Two levels of...
MIL-PRF-19500/707
February 6, 2002
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON TYPES 2N7500U5, 2N7501U5, AND 2N7502U5 JANTXVR AND JANSR
This specification covers the performance requirements for a N-Channel, enhancement-mode, MOSFET, radiation hardened (total dose and Single Event Effects (SEE)), power transistor. Two levels of...