NPFC - MIL-PRF-19500/707
TRANSISTOR, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) N-CHANNEL, SILICON, TYPES 2N7500U5, 2N7501U5, AND 2N7502U5, JANTXVR AND JANSR
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| Organization: | NPFC |
| Publication Date: | 11 February 2015 |
| Status: | inactive |
| Page Count: | 25 |
scope:
This specification covers the performance requirements for a N-Channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor for use in particular powerswitching applications. Two levels of product assurance (JANTXV and JANS) are provided for each encapsulated device type as specified in MIL-PRF-19500, with avalanche energy maximum rating (EAS) and maximum avalanche current (IAS). See 6.5 for unencapsulated JANHC and JANKC die versions.
intended Use:
Semiconductors conforming to this specification are intended for original equipment design applications and logistic support of existing equipment.
Document History
June 1, 2020
TRANSISTOR, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) N-CHANNEL, SILICON, TYPES 2N7500U5, 2N7501U5, 2N7502U5, AND 2N7562U5 JANTXVR AND JANSR
Scope.
This specification covers the performance requirements for a N-Channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor for use in...
MIL-PRF-19500/707
February 11, 2015
TRANSISTOR, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) N-CHANNEL, SILICON, TYPES 2N7500U5, 2N7501U5, AND 2N7502U5, JANTXVR AND JANSR
This specification covers the performance requirements for a N-Channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor for use in...
March 17, 2011
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7500U5, 2N7501U5, AND 2N7502U5, JANTXVR AND JANSR
This specification covers the performance requirements for a N-Channel, enhancement-mode, MOSFET, radiation hardened (total dose and Single Event Effects (SEE)), power transistor. Two levels of...
September 6, 2007
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7500U5, 2N7501U5, AND 2N7502U5, JANTXVR AND JANSR
This specification covers the performance requirements for a N-Channel, enhancement-mode, MOSFET, radiation hardened (total dose and Single Event Effects (SEE)), power transistor. Two levels of...
April 11, 2007
Semiconductor Device, Field Effect Radiation Hardened (Total Dose and Single Event Effects) Transistor, N-Channel, Silicon Types 2N7500U5, 2N7501U5, and 2N7502U5 JANTXVR and JANSR
This specification covers the performance requirements for a N-Channel, enhancement-mode, MOSFET, radiation hardened (total dose and Single Event Effects (SEE)), power transistor. Two levels of...
February 6, 2002
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON TYPES 2N7500U5, 2N7501U5, AND 2N7502U5 JANTXVR AND JANSR
This specification covers the performance requirements for a N-Channel, enhancement-mode, MOSFET, radiation hardened (total dose and Single Event Effects (SEE)), power transistor. Two levels of...