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DLA - SMD-5962-84156 REV C

MICROCIRCUIT, DIGITAL, LOW-POWER SCHOTTKY, TTL, BUFFER, MONOLITHIC SILICON

inactive
Organization: DLA
Publication Date: 5 February 1992
Status: inactive
Page Count: 11
scope:

This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices".

The complete part number shall be as shown in the following example:

The device type shall identify the circuit function as follows:

Device type Generic number Circuit 01 54LS541 Noninverting octal buffer gates (inverting control) with three-state outputs

The case outlines shall be as designated in appendix C of MIL-M-38510, and as follows:

Outline letter Case outline S F-9 (20-lead, ¼" × ½"), flat package 2 C-2 (20-terminal, .350" × .350"), square chip carrier package

Supply voltage range - - - - - - - - - - - - - - - - - −0.5 V dc to +7.0 V dc Input voltage range- - - - - - - - - - - - - - - - - - −1.5 V dc at −18 mA to +7.0 V dc Storage temperature range- - - - - - - - - - - - - - - −65°C to +150°C Maximum power dissipation (PD) 1/ - - - - - - - - - - 302 mW Lead temperature (soldering, 10 seconds) - - - - - - - +300°C Thermal resistance, junction-to-case (θJC): Cases S and 2- - - - - - - - - - - - - - - - - - - - See MIL-M-38510, appendix C Junction temperature (TJ)- - - - - - - - - - - - - - - +175°C

Supply voltage (VCC) - - - - - - - - - - - - - - - - - - 4.5 V dc minimum to 5.5 V dc maximum Minimum high level input voltage (VIH) - - - - - - - - - 2.0 V dc Maximum low level input voltage (VIL)- - - - - - - - - - 0.7 V dc Case operating temperature range (TC)- - - - - - - - - - −55°C to +125°C

intended Use:

Microcircuits conforming to this drawing are intended for use when military specifications do not exist and qualified military devices that will perform the required function are not available for... View More

Document History

August 18, 2017
MICROCIRCUIT, DIGITAL, LOW-POWER SCHOTTKY, TTL, BUFFER, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
August 17, 2005
MICROCIRCUIT, DIGITAL, LOW-POWER SCHOTTKY, TTL, BUFFER, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
August 20, 2002
MICROCIRCUIT, DIGITAL, LOW-POWER SCHOTTKY, TTL, BUFFER, MONOLITHIC SILICON
A description is not available for this item.
SMD-5962-84156 REV C
February 5, 1992
MICROCIRCUIT, DIGITAL, LOW-POWER SCHOTTKY, TTL, BUFFER, MONOLITHIC SILICON
This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices"....
October 15, 1987
MICROCIRCUIT, DIGITAL, LOW-POWER SCHOTTKY, TTL, BUFFER, MONOLITHIC SILICON
A description is not available for this item.
January 28, 1987
MICROCIRCUIT, DIGITAL, LOW-POWER SCHOTTKY, TTL, BUFFER, MONOLITHIC SILICON
A description is not available for this item.
July 1, 1985
MICROCIRCUIT, DIGITAL, LOW-POWER SCHOTTKY, TTL, BUFFER, MONOLITHIC SILICON
A description is not available for this item.

References

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