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DLA - SMD-5962-88576

MICROCIRCUIT, DIGITAL, HIGH SPEED CMOS, DUAL 4-INPUT AND GATE, MONOLITHIC SILICON

inactive
Organization: DLA
Publication Date: 10 August 1988
Status: inactive
Page Count: 10
scope:

This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices".

The complete part number shall be as shown in the following example:

The device type shall identify the circuit function as follows:

Device type Generic number Circuit function 01 54HC21 Dual 4-input AND gate

The case outlines shall be as designated in appendix C of MIL-M-38510, and as follows:

Outline letter Case outline C D-1 (14-lead, .785" × .310" × .200"), dual-in-line package D F-2 (14-lead, .390" × .260" × .085"), flat package 2 C-2 (20-terminal, .358" × .358" × .100"), square chip carrier package

Supply voltage range (VCC) - - - - - - - - - - - - - - −0.5 V dc to +7.0 V dc DC input voltage - - - - - - - - - - - - - - - - - - - −0.5 V dc to VCC + 0.5 V dc DC output voltage - - - - - - - - - - - - - - - - - - - −0.5 V dc to VCC + 0.5 V dc Clamp diode current - - - - - - - - - - - - - - - - - - ±20 mA DC output current (per pin) - - - - - - - - - - - - - - ±25 mA DC VCC or GND current (per pin) - - - - - - - - - - - - ±50 mA Storage temperature range - - - - - - - - - - - - - - - −65°C to +150°C Maximum power dissipation (PD) 2/ - - - - - - - - - - 500 mW Lead temperature (soldering, 10 seconds) - - - - - - - +260°C Thermal resistance, junction-to-case (θJC): Cases C, D, and 2 - - - - - - - - - - - - - - - - - - See MIL-M-38510, appendix C Junction temperature (TJ) - - - - - - - - - - - - - - - +175°C

Supply voltage (VCC) - - - - - - - - - - - - - - - - - +2.0 V dc to +6.0 V dc Case operating temperature range (TC) - - - - - - - - - −55°C to +125°C Input rise or fall time: VCC = 2.0 V - - - - - - - - - - - - - - - - - - - - - 0 to 1000 ns VCC = 4.5 V - - - - - - - - - - - - - - - - - - - - - 0 to 500 ns VCC = 6.0 V - - - - - - - - - - - - - - - - - - - - - 0 to 400 ns

intended Use:

Microcircuits conforming to this drawing are intended for use when military specifications do not exist and qualified military devices that will perform the required function are not available for... View More

Document History

March 27, 2019
MICROCIRCUIT, DIGITAL, HIGH-SPEED CMOS, DUAL 4-INPUT AND GATE, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
December 19, 2011
MICROCIRCUIT, DIGITAL, HIGH SPEED CMOS, DUAL 4-INPUT AND GATE, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
June 14, 2005
MICROCIRCUIT, DIGITAL, HIGH SPEED CMOS, DUAL 4-INPUT AND GATE, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
SMD-5962-88576
August 10, 1988
MICROCIRCUIT, DIGITAL, HIGH SPEED CMOS, DUAL 4-INPUT AND GATE, MONOLITHIC SILICON
This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices"....

References

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