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DLA - SMD-5962-90964

MICROCIRCUIT, MEMORY, DIGITAL, CMOS, FIELD PROGRAMMABLE GATE ARRAY, 1200 GATES, MONOLITHIC SILICON

inactive
Organization: DLA
Publication Date: 17 June 1992
Status: inactive
Page Count: 18
scope:

This drawing forms a part of a one part - one part number documentation system (see 6.6 herein). Two product assurance classes consisting of military high reliability (device classes B, Q and M) and space application (device classes S and V), and a choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). Device class M microcircuits represent non-JAN class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices". When available, a choice of radiation hardness assurance (RHA) levels are reflected in the PIN.

The PIN shall be as shown in the following example:

Device classes M, B, and S RHA marked devices shall meet the MIL-M-38510 specified RHA levels and shall be marked with the appropriate RHA designator. Device classes Q and V RHA marked devices shall meet the MIL-I-38535 specified RHA levels and shall be marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device.

The device type(s) shall identify the circuit function as follows:

Device type Generic number Circuit function 01 1010 1200 gate, field programmable gate array

The device class designator shall be a single letter identifying the product assurance level as follows:

Device class Device requirements documentation M Vendor self-certification to the requirements for non-JAN class B microcircuits in accordance with 1.2.1 of MIL-STD-883 B or S Certification and qualification to MIL-M-38510 Q or V Certification and qualification to MIL-I-38535

The case outline(s) shall be designated in MIL-STD-1835 and as follows:

Outline letter Descriptive designator Terminals Package style X CMGA15-PN 84 pin grid array 1/ Y CQCCI-F84 84 unformed-lead chip carrier

The Lead finish shall be as specified in MIL-M-38510 for classes M, B, and S or MIL-I-38535 for classes Q and V. Finish letter "X" shall not be marked on the microcircuit or its packaging. The "X" designation is for use in specifications when lead finishes A, B, and C are considered acceptable and interchangeable without preference.

DC supply voltage range (VDD)- - - - - - - - - - - - - - −0.5 V dc to +7.0 V dc Input voltage range (VI) - - - - - - - - - - - - - - - - −0.5 V dc to VDD + 0.5 V dc Output voltage range (VO)- - - - - - - - - - - - - - - - −0.5 V dc to VDD + 0.5 V dc Input clamp current (IIC)- - - - - - - - - - - - - - - - ±20 mA Output clamp current (IOC) - - - - - - - - - - - - - - - ±20 mA Continuous output current IO)- - - - - - - - - - - - - - ±25 mA Storage temperature range (TSTG) - - - - - - - - - - - - −65°C to +150°C Lead temperature (soldering, 10 seconds) - - - - - - - - 300°C Thermal resistance, junction-to-case (θJC) - - - - - - - See MIL-STD-1835 Maximum junction temperature (TJ) - - - - - - - - - - - +175°C

Supply voltage range (VDD) - - - - - - - - - - - - - - - +4.5 V dc to +5.5 V dc Case operating temperature range (TC)- - - - - - - - - - −55°C to +125°C

Fault coverage measurement of manufacturing logic tests (MIL-STD-883, test method 5012)- - - - - - XX percent 2/

intended Use:

Microcircuits conforming to this drawing are intended fop use for Government microcircuit applications (original equipment), design applications, and logistics purposes.

Microcircuits... View More

Document History

June 8, 2023
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, FIELD PROGRAMMABLE GATE ARRAY, 1200 GATES, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes. Replaceability....
March 1, 2016
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, FIELD PROGRAMMABLE GATE ARRAY, 1200 GATES, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device class Q and M) and space application (device class V). A choice of case outlines and lead finishes are...
May 7, 2007
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, FIELD PROGRAMMABLE GATE ARRAY, 1200 GATES, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes...
June 30, 1994
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, FIELD PROGRAMMABLE GATE ARRAY, 1200 GATES, MONOLITHIC SILICON
This drawing forms a part of a one part - one part number documentation system (see 6.6 herein). Two product assurance classes consisting of military high reliability (device classes Q and M) and...
SMD-5962-90964
June 17, 1992
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, FIELD PROGRAMMABLE GATE ARRAY, 1200 GATES, MONOLITHIC SILICON
This drawing forms a part of a one part - one part number documentation system (see 6.6 herein). Two product assurance classes consisting of military high reliability (device classes B, Q and M) and...

References

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