NPFC - MIL-PRF-19500/660
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE ONLY) TRANSISTOR, P-CHANNEL SILICON, TYPES 2N7424, 2N7425, AND 2N7426, JANTXVR, JANTXVF, JANSR, AND JANSF
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| Organization: | NPFC |
| Publication Date: | 27 October 2003 |
| Status: | inactive |
| Page Count: | 21 |
scope:
This specification covers the performance requirements for a P-channel, enhancement-mode, MOSFET, radiation hardened (total dose only), power transistor. Two levels of product assurance are provided for each device type as specified in MIL-PRF-19500, with avalanche energy maximum rating (EAS) and maximum avalanche current (IAS).
intended Use:
The notes specified in MIL-PRF-19500 are applicable to this specification.
Document History
December 20, 2019
TRANSISTOR, FIELD EFFECT RADIATION HARDENED, P-CHANNEL SILICON, TYPES 2N7424, 2N7425, AND 2N7426, JANTXVR, JANTXVF, JANSR, AND JANSF
Scope.
This specification covers the performance requirements for a P-channel, enhancement-mode, MOSFET, radiation hardened, power transistor. Two levels of product assurance (JANTXV and JANS) are...
November 7, 2018
Semiconductor Device, Field Effect Radiation Hardened Transistor, P-Channel Silicon, Types 2N7424, 2N7425, and 2N7426, JANTXVR, JANTXVF, JANSR, and JANSF
A description is not available for this item.
December 6, 2013
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTOR, P-CHANNEL SILICON, TYPES 2N7424, 2N7425, AND 2N7426, JANTXVR, JANTXVF, JANSR, AND JANSF
This specification covers the performance requirements for a P-channel, enhancement-mode, MOSFET, radiation hardened, power transistor. Two levels of product assurance are provided for each device...
February 11, 2013
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTOR, P-CHANNEL SILICON, TYPES 2N7424, 2N7425, AND 2N7426, JANTXVR, JANTXVF, JANSR, AND JANSF
This specification covers the performance requirements for a P-channel, enhancement-mode, MOSFET, radiation hardened, power transistor. Two levels of product assurance are provided for each device...
February 8, 2008
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE ONLY) TRANSISTOR, P-CHANNEL SILICON, TYPES 2N7424, 2N7425, AND 2N7426, JANTXVR, JANTXVF, JANSR, AND JANSF
This specification covers the performance requirements for a P-channel, enhancement-mode, MOSFET, radiation hardened (total dose only), power transistor. Two levels of product assurance are provided...
June 4, 2007
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE ONLY) TRANSISTOR, P-CHANNEL SILICON, TYPES 2N7424, 2N7425, AND 2N7426, JANTXVR, JANTXVF, JANSR, AND JANSF
This specification covers the performance requirements for a P-channel, enhancement-mode, MOSFET, radiation hardened (total dose only), power transistor. Two levels of product assurance are provided...
MIL-PRF-19500/660
October 27, 2003
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE ONLY) TRANSISTOR, P-CHANNEL SILICON, TYPES 2N7424, 2N7425, AND 2N7426, JANTXVR, JANTXVF, JANSR, AND JANSF
This specification covers the performance requirements for a P-channel, enhancement-mode, MOSFET, radiation hardened (total dose only), power transistor. Two levels of product assurance are provided...
April 5, 2002
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE ONLY) TRANSISTOR, P-CHANNEL SILICON, TYPES 2N7424, 2N7425, AND 2N7426, JANTXVR, JANTXVF, JANSR, AND JANSF
A description is not available for this item.
February 21, 2001
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE ONLY) TRANSISTOR, P-CHANNEL SILICON TYPES 2N7424, 2N7425 AND 2N7426 JANTXVR, JANTXVF, JANSR AND JANSF
A description is not available for this item.
May 27, 1998
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE ONLY) TRANSISTOR, P-CHANNEL SILICON, TYPES 2N7424, 2N7425 AND 2N7426 JANTXVR, JANTXVF, JANSR, AND JANSF
This specification covers the performance requirements for a P-channel, enhancement-mode, MOSFET, radiation hardened (total dose only), power transistor. Two levels of product assurance are provided...