DLA - SMD-5962-96532 REV B
MICROCIRCUIT, DIGITAL, RADIATION HARDENED, ADVANCED CMOS, 4-WIDE 2-INPUT AND-OR-INVERT GATE, MONOLITHIC SILICON
inactive
| Organization: | DLA |
| Publication Date: | 4 September 2001 |
| Status: | inactive |
| Page Count: | 17 |
Document History
December 21, 2020
MICROCIRCUIT, DIGITAL, ADVANCED CMOS, RADIATION HARDENED, 4-WIDE 2-INPUT AND-OR-INVERT GATE, MONOLITHIC SILICON
Scope.
This drawing documents two product assurance class levels consisting of high reliability device class Q and space application device class V. A choice of case outlines and lead finishes are...
October 23, 2013
MICROCIRCUIT, DIGITAL, ADVANCED CMOS, RADIATION HARDENED, 4-WIDE 2-INPUT AND-OR-INVERT GATE, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability device class Q and space application device class V. A choice of case outlines and lead finishes are available...
November 21, 2007
MICROCIRCUIT, DIGITAL, ADVANCED CMOS, RADIATION HARDENED, 4-WIDE 2-INPUT AND-OR-INVERT GATE, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes...
SMD-5962-96532 REV B
September 4, 2001
MICROCIRCUIT, DIGITAL, RADIATION HARDENED, ADVANCED CMOS, 4-WIDE 2-INPUT AND-OR-INVERT GATE, MONOLITHIC SILICON
A description is not available for this item.
December 12, 1996
MICROCIRCUIT, DIGITAL, RADIATION HARDENED, ADVANCED CMOS, 4-WIDE 2-INPUT AND-OR-INVERT GATE, MONOLITHIC SILICON
A description is not available for this item.
April 5, 1996
MICROCIRCUIT, DIGITAL, RADIATION HARDENED, ADVANCED CMOS, 4-WIDE 2-INPUT AND-OR-INVERT GATE, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes...