DOD - SMD 5962-96532
MICROCIRCUIT, DIGITAL, ADVANCED CMOS, RADIATION HARDENED, 4-WIDE 2-INPUT AND-OR-INVERT GATE, MONOLITHIC SILICON
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| Organization: | DOD |
| Publication Date: | 23 October 2013 |
| Status: | inactive |
| Page Count: | 15 |
scope:
This drawing documents two product assurance class levels consisting of high reliability device class Q and space application device class V. A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN.
intended Use:
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
Document History
December 21, 2020
MICROCIRCUIT, DIGITAL, ADVANCED CMOS, RADIATION HARDENED, 4-WIDE 2-INPUT AND-OR-INVERT GATE, MONOLITHIC SILICON
Scope.
This drawing documents two product assurance class levels consisting of high reliability device class Q and space application device class V. A choice of case outlines and lead finishes are...
SMD 5962-96532
October 23, 2013
MICROCIRCUIT, DIGITAL, ADVANCED CMOS, RADIATION HARDENED, 4-WIDE 2-INPUT AND-OR-INVERT GATE, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability device class Q and space application device class V. A choice of case outlines and lead finishes are available...
November 21, 2007
MICROCIRCUIT, DIGITAL, ADVANCED CMOS, RADIATION HARDENED, 4-WIDE 2-INPUT AND-OR-INVERT GATE, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes...
September 4, 2001
MICROCIRCUIT, DIGITAL, RADIATION HARDENED, ADVANCED CMOS, 4-WIDE 2-INPUT AND-OR-INVERT GATE, MONOLITHIC SILICON
A description is not available for this item.
December 12, 1996
MICROCIRCUIT, DIGITAL, RADIATION HARDENED, ADVANCED CMOS, 4-WIDE 2-INPUT AND-OR-INVERT GATE, MONOLITHIC SILICON
A description is not available for this item.
April 5, 1996
MICROCIRCUIT, DIGITAL, RADIATION HARDENED, ADVANCED CMOS, 4-WIDE 2-INPUT AND-OR-INVERT GATE, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes...