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JEDEC JESD 35-2

Test Criteria for the Wafer-Level Testing of Thin Dielectrics

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Organization: JEDEC
Publication Date: 1 February 1996
Status: active
Page Count: 12
scope:

This addendum includes test criteria to supplement JESD35. JESD35 describes procedures developed for estimating the overall integrity of thin oxides in the MOS Integrated Circuit manufacturing industry. Two test procedures are included in JESD35: a Voltage-Ramp (V-Ramp) and a Current-Ramp (J-Ramp). As JESD35 became implemented into production facilities on a variety of test structures and oxide attributes, a need arose to clarify end point determination and point out some of the obstacles that could be overcome by careful characterization of the equipment and test structures.

Document History

JEDEC JESD 35-2
February 1, 1996
Test Criteria for the Wafer-Level Testing of Thin Dielectrics
This addendum includes test criteria to supplement JESD35. JESD35 describes procedures developed for estimating the overall integrity of thin oxides in the MOS Integrated Circuit manufacturing...

References

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