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DLA - SMD-5962-96831

MICROCIRCUIT, LINEAR, RADIATION HARDENED, DUAL, HIGH SPEED, LOW POWER, VIDEO, CLOSED LOOP BUFFER, MONOLITHIC SILICON

inactive
Organization: DLA
Publication Date: 20 March 1996
Status: inactive
Page Count: 14
scope:

This drawing forms a part of a one part - one part number documentation system (see 6.6 herein). Two product assurance classes consisting of military high reliability (device classes Q and M) and space application (device class V), and a choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). Device class M microcircuits represent non-JAN class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices". When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN.

The PIN shall be as shown in the following example:

Device class M RHA marked devices shall meet the MIL-I-38535 appendix A specified RHA levels and shall be marked with the appropriate RHA designator. Device classes Q and V RHA marked devices shall meet the MIL-I-38535 specified RHA levels and shall be marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device.

The device type(s) shall identify the circuit function as follows:

Device type Generic number Circuit function 01 HS1212RH Radiation hardened D.I., dual, high speed, low power, video closed loop buffer

The device class designator shall be a single letter identifying the product assurance level as follows:

Device class Device requirements documentation M Vendor self-certification to the requirements for non-JAN class B microcircuits in accordance with 1.2.1 of MIL-STD-883 Q or V Certification and qualification to MIL-I-38535

The case outline(s) shall be as designated in MIL-STD-1835 and as follows:

Outline letter Descriptive designator Terminals Package Style P GDIP1-T8 8 Dual-in-line package

The lead finish shall be as specified in MIL-STD-883 (see 3.1 herein) for class M or MIL-I-38535 for classes Q and V. Finish letter "X" shall not be marked on the microcircuit or its packaging. The "X" designation is for use in specifications when lead finishes A, B, and C are considered acceptable and interchangeable without preference.

Voltage between +VS and −VS . . . . . . . . . . . . . . . . . . . 12 V dc Voltage at either input terminal . . . . . . . . . . . . . . . . +VS to −VS Output current . . . . . . . . . . . . . . . . . . . . . . . . . Short circuit protected 2/ Output current (50% duty cycle) . . . . . . . . . . . . . . . . . 60 mA 2/ Maximum package power dissipation (PD) (TA = +125°C) . . . . . . 0.44 W 3/ Junction temperature (TJ) . . . . . . . . . . . . . . . . . . . . +175°C Storage temperature range (TSTG) . . . . . . . . . . . . . . . . −65°C to +150°C Lead temperature (soldering, 10 seconds) . . . . . . . . . . . . +300°C Thermal resistance, junction-to-case (ΘJC) . . . . . . . . . . . 30°C/W Thermal resistance, junction-to-ambient ΘJA) . . . . . . . . . . 115°C/W

Operating supply voltage (±VS) . . . . . . . . . . . . . . . . . ±5 V Load resistance (RL) . . . . . . . . . . . . . . . . . . . . . . ≥ 50 Ω Ambient operating temperature range (TA) . . . . . . . . . . . . −55°C to 125°C Radiation features: Neutron . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4/ Total dose . . . . . . . . . . . . . . . . . . . . . . . . . . > 300 Krads 5/ Latch up . . . . . . . . . . . . . . . . . . . . . . . . . . . None 6/

intended Use:

Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.

Microcircuits... View More

Document History

July 13, 2010
MICROCIRCUIT, LINEAR, RADIATION HARDENED, DUAL, HIGH SPEED, LOW POWER, VIDEO, CLOSED LOOP BUFFER, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes...
July 7, 2003
MICROCIRCUIT, LINEAR, RADIATION HARDENED, DUAL, HIGH SPEED, LOW POWER, VIDEO, CLOSED LOOP BUFFER, MONOLITHIC SILICON
A description is not available for this item.
September 13, 1999
MICROCIRCUIT, LINEAR, RADIATION HARDENED, DUAL, HIGH SPEED, LOW POWER, VIDEO, CLOSED LOOP BUFFER, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes. Microcircuits covered by...
SMD-5962-96831
March 20, 1996
MICROCIRCUIT, LINEAR, RADIATION HARDENED, DUAL, HIGH SPEED, LOW POWER, VIDEO, CLOSED LOOP BUFFER, MONOLITHIC SILICON
This drawing forms a part of a one part - one part number documentation system (see 6.6 herein). Two product assurance classes consisting of military high reliability (device classes Q and M) and...

References

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