NPFC - MIL-S-19500/507
SEMICONDUCTOR DEVICE, DIODE, SILICON, BIPOLAR TRANSIENT VOLTAGE SUPPRESSOR TYPES 1N6036A THROUGH 1N6072A JAN, JANTX, JANTXV, AND JANS
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| Organization: | NPFC |
| Publication Date: | 5 January 1995 |
| Status: | inactive |
| Page Count: | 1 |
Document History
November 18, 2022
SEMICONDUCTOR DEVICE, DIODE, SILICON, BIPOLAR TRANSIENT VOLTAGE SUPPRESSOR, TYPES 1N6036 THROUGH 1N6072 JAN, JANTX, AND JANTXV
Scope.
This specification covers the performance requirements for 1500 watt, bi-directional, silicon, transient voltage suppressor diodes. Three levels of product assurance are provided for each...
September 14, 2017
SEMICONDUCTOR DEVICE, DIODE, SILICON, BIPOLAR TRANSIENT VOLTAGE SUPPRESSOR, TYPES 1N6036 THROUGH 1N6072 JAN, JANTX, AND JANTXV
This specification covers the performance requirements for 1500 watt, bi-directional, silicon, transient voltage suppressor diodes. Three levels of product assurance are provided for each device as...
November 23, 2011
SEMICONDUCTOR DEVICE, DIODE, SILICON, BIPOLAR TRANSIENT VOLTAGE SUPPRESSOR, TYPES 1N6036A THROUGH 1N6072A JAN, JANTX, AND JANTXV
This specification covers the performance requirements for 1500 watt, bi-directional, silicon, transient voltage suppressor diodes. Three levels of product assurance are provided for each device as...
November 23, 2011
SEMICONDUCTOR DEVICE, DIODE, SILICON, BIPOLAR TRANSIENT VOLTAGE SUPPRESSOR, TYPES 1N6036A THROUGH 1N6072A JAN, JANTX, AND JANTXV
This specification covers the performance requirements for 1500 watt, bi-directional, silicon, transient voltage suppressor diodes. Three levels of product assurance are provided for each device as...
August 7, 2007
SEMICONDUCTOR DEVICE, DIODE, SILICON, BIPOLAR TRANSIENT VOLTAGE SUPPRESSOR, TYPES 1N6036A THROUGH 1N6072A JAN, JANTX, AND JANTXV
This specification covers the performance requirements for 1500 watt, bi-directional, silicon, transient voltage suppressor diodes. Three levels of product assurance are provided for each device as...
August 8, 2003
SEMICONDUCTOR DEVICE, DIODE, SILICON, BIPOLAR TRANSIENT VOLTAGE SUPPRESSOR TYPES 1N6036A THROUGH 1N6072A JAN, JANTX, JANTXV
This specification covers the performance for 1500 watt, bi-directional, silicon, transient voltage suppressor diodes. Three levels of products assurance are provided for each device as specified in...
September 12, 1999
SEMICONDUCTOR DEVICE, DIODE, SILICON, BIPOLAR TRANSIENT VOLTAGE SUPPRESSOR TYPES 1N6036A THROUGH 1N6072A JAN, JANTX, JANTXV, AND JANS
This specification covers the performance requirements for 1500 watt, peak, pulse power, silicon, transient, voltage suppressor diodes. Four levels of product assurance are provided for each device...
MIL-S-19500/507
January 5, 1995
SEMICONDUCTOR DEVICE, DIODE, SILICON, BIPOLAR TRANSIENT VOLTAGE SUPPRESSOR TYPES 1N6036A THROUGH 1N6072A JAN, JANTX, JANTXV, AND JANS
A description is not available for this item.
December 9, 1992
SEMICONDUCTOR DEVICE, DIODE, SILICON, BIPOLAR TRANSIENT VOLTAGE SUPPRESSOR TYPES 1N6036A THROUGH 1N6072A JAN, JANTX, JANTXV, AND JANS
This specification covers the detail requirements for 1500 watt peak pulse power transient voltage suppressor diodes. Four levels of product assurance are provided for each device as specified in...
September 14, 1981
SEMICONDUCTOR DEVICE, DIODE, SILICON, BIPOLAR TRANSIENT VOLTAGE SUPPRESSOR TYPES 1N6036A THROUGH 1N6072A JAN, JANTX, JANTXV, AND JANS
A description is not available for this item.
December 31, 1975
SEMICONDUCTOR DEVICE, DIODE, SILICON, BIPOLAR TRANSIENT VOLTAGE SUPPRESSOR 1N6036A THROUGH 1N6072A, NON-TX, TX, TXV
A description is not available for this item.